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BLM8205

BLM8205

  • 厂商:

    BELLING(上海贝岭)

  • 封装:

    SOT23-6

  • 描述:

    2个N沟道 漏源电压(Vdss):19.5V 连续漏极电流(Id):4A 功率(Pd):1.25W 导通电阻(RDS(on)@Vgs,Id):27mΩ@4.5V,4A 阈值电压(Vgs(th)@Id)...

  • 数据手册
  • 价格&库存
BLM8205 数据手册
Pb Free Product BLM8205 N-Channel Enhancement Mode Power MOSFET Description D1 D2 The BLM8205 uses advanced trench technology to provide G1 excellent RDS(ON), low gate charge and operation with gate G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram General Features ● VDS = 19.5V,ID = 4A Typ.RDS(ON) = 21mΩ @ VGS=4.5V Typ.RDS(ON) = 27mΩ @ VGS=2.5V ● High Power and current handing capability ● Lead free product is acquired Marking and pin Assignment ● Surface Mount Package Application ●Battery protection ●Load switch ●Power management SOT23-6L top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 8205 BLM8205 SOT23-6L Ø180mm 8mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit 19.5 V ±8 V 4 A 25 A 1.25 W -55 To 150 ℃ 100 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250µA 19.5 21 - V Zero Gate Voltage Drain Current IDSS VDS=19.5V,VGS=0V - - 1 µA Page1 www.belling.com.cn V2.2 Pb Free Product BLM8205 Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250µA 0.45 0.7 1.2 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=4A - 21 27 mΩ VGS=2.5V, ID=3A - 27 40 mΩ VDS=5V,ID=4A - 10 - S - 800 - PF - 155 - PF On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss - 125 - PF Turn-on Delay Time td(on) - 18 - nS Turn-on Rise Time tr VDD=10V,ID=1A - 5 - nS td(off) VGS=4V,RGEN=10Ω - 43 - nS - 20 - nS - 11 - nC - 2.3 - nC - 2.5 - nC 1.3 V 2 A VDS=8V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V,ID=4A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=2A - - Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Page2 www.belling.com.cn V2.2 Pb Free Product BLM8205 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rgen D tr td(on) Rl Vin Vgs ton td(off) 90% Vout VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A) Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output CHARACTERISTICS Page3 Figure 6 Drain-Source On-Resistance www.belling.com.cn V2.2 Pb Free Product ID- Drain Current (A) Normalized On-Resistance BLM8205 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge Page4 Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward www.belling.com.cn V2.2 Pb Free Product ID- Drain Current (A) BLM8205 Vds Drain-Source Voltage (V) Safe Operation Area Transient Thermal Impedance r(t),Normalized Effective Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance Page5 www.belling.com.cn V2.2 Pb Free Product BLM8205 SOT23-6L PACKAGE INFORMATION Page6 www.belling.com.cn V2.2