BLP05N08G
Step-Down Converter
,
1.Description
BLP05N08G, the N-channel Enhanced Power
MOSFETs, is obtained by advanced double trench
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. This is suitable device for motor
drivers and high speed switching applications.
KEY CHARACTERISTICS
Parameter
Value
Unit
V DSS
85
V
ID
120
A
mΩ
R DS(on).typ
4.4
FEATURES
Fast Switching
Low On-Resistance ( RDS(on)≤5mΩ )
Low Gate Charge
Low Reverse transfer capacitances
High avalanche ruggedness
RoHS product
APPLICATIONS
Switching applications
Motor drivers
ORDERING INFORMATION
Ordering Codes
Package
TO-263
TO-220
Product Code
Packing
BLP05N08G-B
TO-263
P05N08G
Reel
BLP05N08G-P
TO-220
P05N08G
Tube
BLP05N08G-B
XXXX:Product Code
(2) Package type
(1) Chip name
(1) BLP05N08G:5mΩ/85V
(2) B:TO-263
P:TO-220
BLP05N08G
Rev1.0
6/2020
XXXX
YYWW ZZ
SSSSS
YYWW:Year&Week
ZZ:Assembly Code
SSSSS:Lot Code
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© 2011 Belling All Rights Reserved
BLP05N08G
Step-Down Converter
2.ABSOLUTE RATINGS
,
at TC=25°C,unless otherwise specified
Symbol
Parameter
V DSS
ID
I DM Note1
V GS
E AS Note2
PD
T J ,T stg
TL
Rating
Units
85
V
Continuous Drain Current, Silicon Limited
138
A
Continuous Drain Current, Package Limited
120
A
Continuous Drain Current @T C =100°C, Silicon Limited
87.4
A
Pulsed Drain Current
480
A
Gate-Source Voltage
±20
V
Avalanche Energy
156
mJ
Power Dissipation
173.6
W
Derating Factor above 25°C
1.39
W/℃
150,–55 to 150
℃
260
℃
Drain-Source Voltage
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Note1:Repetitive Rating:Pulse width limited by maximum junction temperature
Note2:L=0.5mH, Ias=25A, Start TJ =25℃
3.Thermal characteristics
Symbol
Parameter
Max
Units
R θJC
R θJA
thermal resistance, Junction-Case
0.72
℃/W
thermal resistance, Junction-Ambient
62.5
℃/W
4.Electrical Characteristics
at TC=25°C, unless otherwise specified
OFF Characteristics
Symbol
Parameter
Test Conditions
V DSS
Drain-Source Breakdown
Voltage
Values
Units
Min
Typ
Max
V GS =0V, I D =250µA
85
--
--
V
V DS =85V, V GS =0V
--
--
1
µA
V DS =68V, V GS =0V
@T C =125°C
--
--
100
µA
I DSS
Drain-Source Leakage Current
I GSS(F)
I GSS(R)
Gate-Source Forward Leakage
V GS =+20V
--
--
100
nA
Gate-Source Reverse Leakage
V GS =-20V
--
--
-100
nA
BLP05N08G
Rev1.0
6/2020
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Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited
© 2011 Belling All Rights Reserved
BLP05N08G
Step-Down Converter
ON Characteristics
Symbol
,
Parameter
Test Conditions
Drain-Source On-Resistance
R DS(on)
Gate Threshold Voltage
V GS(th)
Pulse width tp≤300µs, δ≤2%
V GS =10V, I D =50A
V DS =V GS , I D =250µA
Values
Min
Typ
Max
Unit
s
--
4.4
5
mΩ
2.0
3.0
4.0
V
Dynamic Characteristics
Symbol
Parameter
C iss
C oss
C rss
Qg
Q gs
Q gd
Input Capacitance
Test Conditions
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V DS =40V,
V GS =0,
f=1MHz
V DD =40V,
I D =50A,
V GS =10V
Gate-Source charge
Gate-Drain charge
Values
Min
Typ
Max
--
4021
--
--
637
--
--
17
--
--
80
--
--
23
--
--
24
--
Units
pF
nC
Switching Characteristics
Symbol
Parameter
t d(on)
tr
t d(off)
tf
Turn-On Delay Time
Test Conditions
V DD =40V,
I D =50A,
V GS =10V,
R G =3Ω,
Resistive Load
Rise Time
Turn-Off Delay Time
Fall Time
Values
Min
Typ
Max
--
22
--
--
42
--
--
48
--
--
25
--
Units
ns
Source-Drain Diode Characteristics
Symbol
Parameter
IS
I SM
V SD
T rr
Q rr
BLP05N08G
Rev1.0
6/2020
Test Conditions
Values
Units
Min
Typ
Max
Continuous Source Current
--
--
120
A
Maximum Pulsed Current
--
--
480
A
Diode Forward Voltage
V GS =0V, I S =50A
--
--
1.2
V
Reverse Recovery Time
I s =20A,
di/dt=100A/us
--
60
--
ns
--
136
--
uC
Reverse Recovery Charge
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BLP05N08G
5. Characteristics Curves
Step-Down Converter
,
Figure 2. Maximum Power Dissipation vs Case
Temperature
Figure 1. Safe Operating Area
Figure 3. Maximum Continuous Drain Current vs
Case Temperature
BLP05N08G
Rev1.0
6/2020
Figure 4. Typical Output Characteristics
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BLP05N08G
Step-Down Converter
Figure 5. Transient Thermal Impedance
Figure 6. Typical Transfer Characteristics
BLP05N08G
Rev1.0
6/2020
Figure 7. Source-Drain Diode Forward
Characteristics
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,
BLP05N08G
Step-Down Converter
Figure 8. Drain-Source On-Resistance vs Drain
Current
Figure 10. Normalized Threshold Voltage vs
Junction Temperature
BLP05N08G
Rev1.0
6/2020
Figure 9. Normalized On-Resistance vs Junction
,
Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
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Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited
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BLP05N08G
Step-Down Converter
Figure 12. Capacitance Characteristics
BLP05N08G
Rev1.0
6/2020
Figure 13. Typical Gate Charge vs Gate-Source
,
Voltage
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BLP05N08G
Step-Down Converter
6. Test Circuit and Waveform
Figure 14. Resistive Switching Test Circuit
Figure 15. Resistive Switching Waveforms
Figure 16. Gate Charge Test Circuit
Figure 17. Gate Charge Waveforms
BLP05N08G
Rev1.0
6/2020
www.belling.com.cn
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited
© 2011 Belling All Rights Reserved
,
BLP05N08G
Step-Down Converter
Figure 18. Diode Reverse Recovery Test Circuit
Figure 19. Diode Reverse Recovery Waveform
Figure 20. Unclamped Inductive Switching Test
Circuit
Figure 21. Unclamped Inductive Switching
Waveform
BLP05N08G
Rev1.0
6/2020
www.belling.com.cn
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited
© 2011 Belling All Rights Reserved
,
BLP05N08G
7. Package Description
Items
A
B
B1
C
D
E
F
G
H
K
L1
L2
I
Q
R
N
Step-Down Converter
,
Values(mm)
MIN
9.80
8.90
0
4.40
1.16
0.70
0.30
1.07
1.30
0.95
14.50
1.60
0
0°
0.4
2.39
MAX
10.40
9.50
0.10
4.80
1.37
0.95
0.60
1.47
1.80
1.37
16.50
2.30
0.2
8°
0.4
2.69
TO-263 Package
BLP05N08G
Rev1.0
6/2020
www.belling.com.cn
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited
© 2011 Belling All Rights Reserved
BLP05N08G
Step-Down Converter
,
Items
A
B
B1
C
C1
D
E
F
G
H
L
N
Q
ΦP
Values(mm)
MIN
9.60
15.0
8.90
4.30
2.30
1.20
0.70
0.30
1.17
2.70
12.6
2.34
2.40
3.50
MAX
10.6
16.0
9.50
4.80
3.10
1.40
0.90
0.60
1.37
3.80
14.8
2.74
3.00
3.90
TO-220 Package
BLP05N08G
Rev1.0
6/2020
www.belling.com.cn
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited
© 2011 Belling All Rights Reserved
BLP05N08G
Step-Down Converter
NOTE:
,
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. Please do not
exceed the absolute maximum ratings of the device when circuit designing.
2. When installing the heat sink, please pay attention to the torsional moment and the smoothness
of the heat sink.
3. MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the
device from being damaged by the static electricity when using it.
4. Shanghai Belling reserves the right to make changes in this specification sheet and is subject to
change without prior notice.
CONTACT:
上海贝岭股份有限公司(总部)
地址:上海市宜山路 810 号
邮编:200233
电话:021-24261000
产品业务咨询及技术支持
电话:021-24261326
传真:021-64852222
邮箱:marketing@belling.com.cn
上海贝岭深圳分公司(华南区)
地址:深圳市福田中心区民田路新华保险大厦 1510 室
邮编:518031
电话:0755-33336776 0755-33336770
传真:0755-33336788
上海贝岭北京办事处(华北区)
地址:北京市西城区新华里 16 号院锦官苑小区 10 号楼 1 单元 1505 室
邮编:100044
电话:010-64179374
传真:010-8835 9236
BLP05N08G
Rev1.0
6/2020
www.belling.com.cn
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited
© 2011 Belling All Rights Reserved
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