BL-L512PD

SILICON PHOTO DIODES BL-L512PD Features: 5.1*3.0*7.4mm SILICON PHOTO DIODES Choice of various viewing angles. Diffused and Water clear lens are available. Fast response time. High photo sensitivity. Small junction capacitance. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitter. Applications: Power Dissipation Reverse Voltage Operation Temperature Storage Temperature Lead Soldering Temperature Pd VR TOPR TSTG TSOL Items Symbol λP VOC ISC IL ID VBR 2θ1/2 Tr/Tf Min. 35 - Wavelength of Peak Sensitivity Open Circuit Voltage Short Circuit Current Reverse Light Current Reverse Dark Current Reverse Break down Voltage Viewing angle Rise/Fall Time w APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 3 WWW.BETLUX.COM EMAIL: SALES@BETLUX.COM , BETLUX@BETLUX.COM ¡ ¡ ¡ ¡ Electronic Optical Characteristics at Ta=25 . w w Typ. 940 0.40 2 3.5 170 35 6/6 Max. 10 - Unit nm V uA uA nA V Deg nS Condition H=5mW/cm2 λP=940nm H=5mW/cm2 λP=940nm VR=5V H=0mW/cm2 VR=10V H=0mW/cm2 IR=100uA RL=1000Ω VR=10V £ lu t e b £¢ ¡ ¡ ¡ Absolute Maximum Ratings at Ta=25 Parameter Symbol       High speed photo detector Camera Infrared remote controller for TVs VCR, audio equipment, air conditioner, etc. Rating 150 35 -40 to +80 -40 to +85 Max.260 5 for 3 sec Max. (1.6mm from the base of the epoxy bulb) . x m o c Unit mW V ℃ ℃ SILICON PHOTO DIODES BL-L512PD w . w w Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is 0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 3 WWW.BETLUX.COM EMAIL: SALES@BETLUX.COM , BETLUX@BETLUX.COM     §    © ¨ § ¦ ¥ ¤ Package configuration & Internal circuit diagram lu t e b . x m o c SILICON PHOTO DIODES BL-L512PD 1 .0 0.5 0 350 Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH( p ) (1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red (9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green 50 FORWARD CURRENT(mA) RELATIVE LUMINOUS INTENSITY 3 2 1 0.5 0.2 0.1 -30 -20 -10 1 8 64 5 23 4.0 40 30 20 10 0 1.2 3.0 1.6 2.0 2.4 2.6 FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE w 0 10 FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT AMBIENT TEMPERATURE Ta( ) FORWARD CURRENT VS. AMBIENT TEMPERATURE 1 5 4 2 3 10 9 8 7 6 5 4 3 2 20 30 40 50 60 70 1 1 Ipeak MAX. IDC MAX. 300KHz 3KHz 10KHz 1KHz 100KHz F-REFRESH RATE 3KHz 300Hz 30KHz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 Ipeak MAX. IDC MAX. 4 3 2 1 1 10 100 1000 tp-PULSE DURATION uS (5) AMBIENT TEMPERATURE Ta( ) 10 100 1000 10,000 tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) NOTE:25 free air temperature unless otherwise specified APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 3 WWW.BETLUX.COM EMAIL: SALES@BETLUX.COM , BETLUX@BETLUX.COM  e .b w w 2.0 1.0 0 3.0 20 40 60 lu t 1 5 B 100 80    ¤ Typical electrical-optical characteristics curves: (A) (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10) 400 450 500 550 600 650 700 750 800 850 900 950 1000 . x 50 40 30 20 10 0 FORWARD CURRENT(mA) m o c 20 40 60 80 100 RELATIVE LUMINOUS INTENSITY 1 6 2,4,8,A 3 5 10,000