BL-M15X882XX

LED DOT MATRIX BL-M15X882XX Features: Ø 38.00mm (1.5” F 3.7 dot matrix LED display ) Ø Low current operation. Ø Excellent character appearance. Ø Easy mounting on P.C. Boards or sockets. Ø I.C. Compatible. Ø ROHS Compliance. 　 Electrical-optical characteristics: (Ta=25°Ｃ ) Part No (Test Condition: IF=20mA) Chip VF Unit:V λP (nm) Iv Typ Max TYP.(mcd) Row Cathode Column Anode Row Anode Column Cathode Emitted Color Material BL-M15A882SG-XX BL-M15B882SG-XX Super Red Green AlGaInP GaP/GaP GaAsP/Ga P GaP/GaP AlGaInP AlGaInP AlGaInP AlGaInP 660 570 635 570 660 574 630 574 2.10 2.20 2.10 2.20 2.10 2.20 2.10 2.20 2.50 2.50 2.50 2.50 2.50 2.50 2.50 2.50 250 195 190 195 320 250 235 250 BL-M15A882EG-XX BL-M15B882EG-XX Orange Green BL-M15A882DUG-XX BL-M15B882DUG-XX Ultra Red Ultra Green BL-M15A882UEUG-X X BL-M15B882UEUG-X X Ultra Orange Ultra Green n -XX: Surface / Lens color： 0 Number Ref Surface Color White Epoxy Color Water clear 1 Black White diffused 2 Gray Red Diffused 3 Red Green Diffused 4 Green Yellow Diffused 5 n Absolute maximum ratings (Ta=25° C) S 30 75 5 150 Parameter Forward Current I F Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR Storage Temperature TSTG Lead Soldering Temperature T SOL G 30 80 5 150 E 30 80 5 150 D 30 75 5 150 UG 30 75 5 150 UE 30 65 5 150 U nit mA mW V mA °Ｃ °Ｃ -40 to +80 -40 to +85 Max.260±5 °Ｃ for 3 sec Max. (1.6mm from the base of the epoxy bulb) ° Ｃ APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V. 3 Page 1 of 3 WWW.BETLUX.COM EMAIL: SALES@BETLUX.COM , BETLUX@BETLUX.COM LED DOT MATRIX BL-M15X882XX 　 n Package configuration & Internal circuit diagram Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ±0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V. 3 Page 2 of 3 WWW.BETLUX.COM EMAIL: SALES@BETLUX.COM , BETLUX@BETLUX.COM LED DOT MATRIX BL-M15X882XX n 1.0 　 Typical electrical-optical characteristics curves: (A) (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10) 0.5 0 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH(? p ) (1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red (9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green 50 FORWAR D C U RREN T(m A) REL ATIVE LUMIN OU S IN TENSITY 3 2 1 0.5 0.2 0.1 -30 -20 -10 1 8 64 5 23 4.0 1 3.0 FORWAR D CU RR EN T( m A) 50 40 30 20 10 0 R ELATIVE L UM IN OUS INTEN SITY 40 30 20 10 0 1.2 1 6 2,4,8,A 3 5 2.0 5 B 1.0 0 20 40 60 80 100 1.6 2.0 2.4 2.6 3.0 20 40 60 80 100 FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT AMBIENT TEMPERATURE Ta(℃) FORWARD CURRENT VS. AMBIENT TEMPERATURE 1 5 4 2 3 3KHz 300KHz 1KHz 100KHz F-REFRESH RATE 10 10KHz 9 8 7 6 5 Ipeak M AX. IDC MAX. 4 3 2 0 10 20 30 40 50 60 70 1 AMBIENT TEMPERATURE Ta(℃ ) 1 10 100 1000 tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) 10,000 Ipeak MAX. IDC MAX. 30KHz 3KHz 300Hz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 4 3 2 1 1 10 100 1000 tp-PULSE DURATION uS (5) 10,000 NOTE:25℃ free air temperature unless otherwise specified APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V. 3 Page 3 of 3 WWW.BETLUX.COM EMAIL: SALES@BETLUX.COM , BETLUX@BETLUX.COM