LED DOT MATRIX BL-M23A881XXX Features: 60.20mm (2.3”) Φ5.0 dot matrix LED display, RGB COLOR Low current operation. Excellent character appearance. Easy mounting on P.C. Boards or sockets. I.C. Compatible. ROHS Compliance.
Electrical-optical characteristics: (Ta=25 ) Part No Emitted Row Cathode Row Anode Column Anode Column Cathode Color
Super Red BL-M23A881RGBXX BL-M23B881RGBXX Green Ultra Blue Ultra Red BL-M23A881DUGU B-XX BL-M23B881DUGU B-XX Ultra Green Ultra Blue
·-XX: Surface / Lens color 0 Number Ref Surface Color White Epoxy Color Water clear
1
Absolute maximum ratings (Ta=25 ) Parameter
Storage Temperature TSTG Lead Soldering Temperature TSOL
-40 to +85 Max.260±5 for 3 sec Max. (1.6mm from the base of the epoxy bulb)
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¢ ¢
Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR
w
S
25 60 5
150
¢
¢
. w w
Black White diffused
lu t e b
InGaN
G 30 65 5 150
(Test Condition: IF=20mA) VF Chip Unit:V λP Material Typ Max (nm)
GaAlAs/GaAs,DH GaP/GaP InGaN GaAlAs/GaAs,DDH AlGaInP 660 570 470 1.85 2.20 2.20 2.50
Iv TYP.(mcd ) 280 250
150
. x
660 574 470
m o c
2.70 4.20 1.85 2.20 2.20 2.50 2.70 4.20
310
380 270
¡
2
3
4 Green Yellow Diffused
5
Gray Red Diffused
Red Green Diffused
B
30 120 5 100
D 25 60 5 150 -40 to +80
UG
30 75 5 150
UB
30 120 5 100
Unit mA mW V mA
LED DOT MATRIX BL-M23A881XXX
Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ±0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice.
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Package configuration & Internal circuit diagram
w
. w w
lu t e b
. x
m o c
LED DOT MATRIX BL-M23A881XXX
1 .0
0.5
0 350
Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green
50 FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY 3 2 1 0.5 0.2 0.1 -30 -20 -10
1
8 64 5
23
4.0
40 30 20 10 0 1.2
3.0
1.6
2.0
2.4
2.6
FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE
w
0 10
FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT
AMBIENT TEMPERATURE Ta( ) FORWARD CURRENT VS. AMBIENT TEMPERATURE
1 5 4 2 3
10 9 8 7 6 5 4 3 2 20 30 40 50 60 70 1 1 Ipeak MAX. IDC MAX.
300KHz 3KHz 10KHz 1KHz 100KHz F-REFRESH RATE
3KHz 300Hz 30KHz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 Ipeak MAX. IDC MAX. 4 3 2 1 1 10 100 1000 tp-PULSE DURATION uS (5)
AMBIENT TEMPERATURE Ta( )
10
100
1000
10,000
tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) NOTE:25
free air temperature unless otherwise specified
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¥
e .b w w
2.0 1.0 0 3.0 20 40 60
lu t
1 5 B 100
80
¦
¤
¦
£
Typical electrical-optical characteristics curves:
(A) (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10)
400
450
500
550
600
650
700
750
800
850
900
950
1000
. x
50 40 30 20 10 0 FORWARD CURRENT(mA)
m o c
20 40 60 80 100
RELATIVE LUMINOUS INTENSITY
1
6 2,4,8,A 3 5
10,000
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