BL-M23E881DUGUB

LED DOT MATRIX BL-M23A881XXX n Ø Ø Ø Ø Ø Ø Features: 60.20mm (2.3” F 5.0 dot matrix LED display, RGB COLOR ) Low current operation. Excellent character appearance. Easy mounting on P.C. Boards or sockets. I.C. Compatible. ROHS Compliance. 　 n Electrical-optical characteristics: (Ta=25℃ ) Part No Row Cathode Row Anode Emitted Column Anode Column Cathode Color Super Red BL-M23F881RGBXX Green Ultra Blue Ultra Red (Test Condition: IF=20mA) Chip VF Unit:V λP Material Typ Max (nm) GaAlAs/GaAs,DH GaP/GaP InGaN GaAlAs/GaAs,DDH AlGaInP InGaN 660 570 470 660 574 470 1.85 2.20 2.70 1.85 2.20 2.70 2.20 2.50 4.20 2.20 2.50 4.20 Iv TYP.(mcd ) 280 250 150 BL-M23E881RGBXX 310 380 270 BL-M23E881DUGU B-XX BL-M23F881DUGU B-XX Ultra Green Ultra Blue · -XX: Surface / Lens color： 0 Number Ref Surface Color White Epoxy Color Water clear n 1 Black White diffused 2 Gray Red Diffused 3 Red Green Diffused 4 Green Yellow Diffused 5 Absolute maximum ratings (Ta=25℃ ) S 25 60 5 150 G 30 65 5 150 B 30 120 5 100 Parameter Forward Current I F Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR Storage Temperature TSTG Lead Soldering Temperature T SOL D 25 60 5 150 -40 to +80 -40 to +85 UG 30 75 5 150 UB 30 120 5 100 Unit mA mW V mA ℃ ℃ ℃ Max.260±5℃ for 3 sec Max. (1.6mm from the base of the epoxy bulb) APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 3 WWW.BETLUX.COM EMAIL: SALES@BETLUX.COM , BETLUX@BETLUX.COM LED DOT MATRIX BL-M23A881XXX 　 ■　 Package configuration & Internal circuit diagram Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ±0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 3 WWW.BETLUX.COM EMAIL: SALES@BETLUX.COM , BETLUX@BETLUX.COM LED DOT MATRIX BL-M23A881XXX ■　 Typical electrical-optical characteristics curves: 1.0 (A) (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10) 　 0.5 0 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH(λ p ) (1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red (9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green 50 FORWAR D C U RREN T(m A) REL ATIVE LUMIN OU S IN TENSITY 3 2 1 0.5 0.2 0.1 -30 -20 -10 1 8 64 5 23 4.0 1 3.0 FORWAR D CU RR EN T( m A) 50 40 30 20 10 0 R ELATIVE L UM IN OUS INTEN SITY 40 30 20 10 0 1.2 1 6 2,4,8,A 3 5 2.0 5 B 1.0 0 20 40 60 80 100 1.6 2.0 2.4 2.6 3.0 20 40 60 80 100 FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT AMBIENT TEMPERATURE Ta(℃) FORWARD CURRENT VS. AMBIENT TEMPERATURE 1 5 4 2 3 3KHz 300KHz 1KHz 100KHz F-REFRESH RATE 10 10KHz 9 8 7 6 5 Ipeak M AX. IDC MAX. 4 3 2 0 10 20 30 40 50 60 70 1 AMBIENT TEMPERATURE Ta(℃ ) 1 10 100 1000 tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) 10,000 Ipeak MAX. IDC MAX. 30KHz 3KHz 300Hz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 4 3 2 1 1 10 100 1000 tp-PULSE DURATION uS (5) 10,000 NOTE:25℃ free air temperature unless otherwise specified APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 3 WWW.BETLUX.COM EMAIL: SALES@BETLUX.COM , BETLUX@BETLUX.COM