1A4

1A4

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    1A4 - PLASTIC SILICON RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
1A4 数据手册
BL GALAXY ELECTRICAL PLASTIC SILICON RECTIFIER FEATURES Low cost D iffused junction Low leakage H igh current capability Easily cleaned with Freon,Alcohol,lsopropanol and similar solvents The plastic material carries U/L recognition 94V-O 1A1 --- 1A7 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A R-1 MECHANICAL DATA C ase:JEDEC R-1,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.007 ounces,0.20 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. 1A1 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA =75 1A2 100 70 100 1A3 200 140 200 1A4 400 280 400 1.0 1A5 600 420 600 1A6 800 560 800 1A7 1000 700 1000 UNITS V V V A VRRM VRMS VDC IF(AV) 50 35 50 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @Tj =125 IFSM 30.0 A Maximum instantaneous forw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage Typical junction capacitance Typical thermal resistance @TA=25 @TA =100 (Note1) VF IR CJ RθJA Tj TSTG 1.0 5.0 50.0 15 50 - 55 ---- + 150 - 55 ---- + 150 V µA pF /W (Note2) Operating junction temperature range Storage temperature range NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal resistance from junction to ambient. www.galaxycn.com Document Number 0260001 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 --TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT 1A1---1A7 FIG.2 -- TYPICAL JUNCTION CAPACITANCE 100 10 4 2 1.0 T J =25 Pulse Width=300us 100 60 f=1MHz TJ=25 CAPACITANCE, pF 40 20 10 AMPERES 0.4 0.2 0.1 0.06 0.04 0.02 0.01 0 .6 0.8 1.0 1.2 1.4 1.6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS FIG.3 -- PEAK FORWARD SURGE CURRENT FIG.4 -- FORWARD DERATING CURVE PEAK FORWARD SURGE CURRENT 30 AVERAGE FORWARD CURRENT, AMPERES 1.0 .8 .6 .4 .2 0 0 25 50 75 100 125 150 175 200 Single Phase Half Wave 60H Z Resistive or Inductive Load 0.375"(9.5mm) Lead Length 20 AMPERES 10      TJ=125 8.3ms Single Half Sine-Wave 0 1 10 100 NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE, www.galaxycn.com Document Number 0260001 BLGALAXY ELECTRICAL 2.
1A4
1. 物料型号: - 型号为1A1至1A7的BL GALAXY ELECTRICAL PLASTIC SILICON RECTIFIER。

2. 器件简介: - 这些器件是低成本的扩散结、低漏电、高电流能力的塑料硅整流器。它们可以用氟利昂、酒精、异丙醇等溶剂轻松清洁,塑料材料符合UL 94V-0标准。

3. 引脚分配: - 根据JEDEC R-1标准,采用模塑塑料外壳,引脚为MIL-STD-202标准第208方法的可焊线。

4. 参数特性: - 工作电压范围为50-100V,电流为1.0A。 - 最大重复峰值反向电压(VRRM)从50V到1000V不等。 - 最大RMS电压(VRMS)从35V到700V不等。 - 最大直流阻断电压(Vpc)与VRRM相同。 - 最大平均整流电流(F(AV))为1.0A。 - 峰值正向浪涌电流(IFSM)为30.0A,叠加在额定负载上,持续时间为8.3ms。 - 最大瞬时正向电压(VE)为1.0V。 - 最大反向电流(IR)在25℃和100℃下分别为50.0mA和5.0mA。 - 典型结电容(CJ)为15pF。 - 典型热阻(RBJA)为50°C/W。

5. 功能详解: - 这些器件适用于单相、半波、60Hz的电阻性或感性负载。对于电容性负载,需要降低20%的额定值。

6. 应用信息: - 适用于需要高电流能力和低漏电的整流应用。

7. 封装信息: - 封装为JEDEC R-1标准,模塑塑料外壳,引脚为可焊线,极性通过色带表示阴极,重量为0.007盎司或0.20克,可任意位置安装。

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