1E2

1E2

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    1E2 - ULTRA FAST RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
1E2 数据手册
BL FEATURES Low cost GALAXY ELECTRICAL 1E1 --- 1E5 VOLTAGE RANGE: 50 --- 600 V CURRENT: 1.0 A ULTRA FAST RECTIFIER R-1 Diffusde junction Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop High current capability The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC R--1,molded plastic Polarity: Color band denotes cathode Weight: 0.007 ounces,0.20 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. 1E1 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 9.5mm lead length, Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @TJ=125 @TA=75 1E2 100 70 100 1E2A 150 105 150 1E3 200 140 200 1.0 1E3A 300 210 300 1E4 400 280 400 1E5 600 420 600 UNITS V V V A VRRM VRMS VDC IF(AV) 50 35 50 IFSM 30.0 A Maximum instantaneous forward voltage @ 1.0A Maximum reverse current @TA=25 VF IR t rr CJ RθJA TJ TSTG 0.95 5.0 150.0 35 17 50 - 55 ----- + 150 - 55 ----- + 150 1.25 1.7 V A ns pF /W at rated DC blocking voltage @TA=100 Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3.Thermal resistance junction to ambient www.galaxycn.com Document Number 0264032 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES F IG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr 1E1 --- 1E5 +0.5A D.U.T. (+) 50VDC (approx) (-) 1 NONINDUCTIVE (-) PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) (-) 0 -0 .2 5 A -1 .0 A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 5 ns/cm F IG.2 -- TYPICAL FORWARD CHARACTERISTIC 10 F IG.3 -- FORW ARD DERATING CURVE z INSTANTANEOUS FORWARD CURRENT 1E1 1.0 AMPERES 0.1 1E5 AMPERES 1E3A AVERAGE FORWARD CURRENT 1.0 0.5 0.01 TJ = 25 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375"(95mm)Lead Length 0 0 25 50 75 1 00 1 25 1 50 175 0.001 0 0 .2 0 .4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS     A MBIENT TEM PERATURE, F IG.4 -- TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT F IG.5 -- PEAK FORW ARD SURGE CURRENT JUNCTION CAPACITANCE,pF 100 TJ = 25 f = 1. 0MHz Vsig = 50mVp-p 10 30 25 20 8.3ms Single Half Sine-Wave AMPERES 15 10 5 0 0 1 5 20 50 100 1 0.1 1 10 100 REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60Hz www.galaxycn.com Document Number 0264032 BLGALAXY ELECTRICAL 2.
1E2
1. 物料型号: - 型号包括1E1、1E2、1E2A、1E3、1E3A、1E4和1E5。

2. 器件简介: - 该器件为超快速整流器,具有低成本、扩散结、低反向漏电流、低正向电压降和高电流能力等特点。塑料材料符合UL认证。

3. 引脚分配: - 根据JEDEC标准R-1封装,采用模塑塑料,极性由色带表示,安装位置任意。

4. 参数特性: - 最大重复峰值反向电压(VRRM):50V至600V不等。 - 最大RMS电压(VRMS):35V至420V不等。 - 最大直流阻断电压(VDC):50V至600V不等。 - 最大平均正向整流电流(IF(AV)):1.0A。 - 峰值正向浪涌电流(IFSM):30.0A,叠加在额定负载上,T=125°C。 - 最大瞬时正向电压(VF):0.95V至1.7V不等。 - 最大反向电流(IR):5.0μA至150.0μA不等。 - 最大反向恢复时间(tm):35ns。 - 典型结电容(C):17pF。 - 典型热阻(PA):50℃/W。 - 工作结温范围(TJ):-55°C至+150°C。 - 存储温度范围(TsTG):-55°C至+150°C。

5. 功能详解: - 该器件为整流器,用于将交流电转换为直流电,具有超快速响应和高效率。

6. 应用信息: - 适用于需要高效率和快速响应的整流应用,如电源、电机控制等。

7. 封装信息: - 封装为模塑塑料,符合JEDEC标准R-1。

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