1F3

1F3

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    1F3 - FAST RECOVERY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
1F3 数据手册
BL FEATURES Low cost GALAXY ELECTRICAL 1F1 --- 1F7 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER R-1 Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC R--1,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.007ounces,0.20 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. 1F1 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 1F2 100 70 100 1F3 200 140 200 1F4 400 280 400 1.0 1F5 600 420 600 1F6 800 560 800 1F7 1000 700 1000 UNITS V V V A VRRM VRMS VDC IF(AV) 50 35 50 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 25.0 A Maximum instantaneous forw ard voltage @1.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 VF IR trr CJ RθJA TJ TSTG 150 1.3 5.0 100.0 250 12 55 - 55---- +150 - 55---- + 150 500 V A ns pF /W Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range N OTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0261001 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 N.1. 10 N.1. 1F1---1F7 trr +0.5A D.U.T. (+) 50VDC (APPROX) (-) 1 N.1. (-) 0 PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) (+) -0.25A -1.0A 1cm NOTE S:1.RISETIM =7ns M INP T IM E E AX. U P DANCE =1M .22pF 2.RISETIM =10ns M SOURC IM E E AX. E P DANCE =5O SE TIM BASEFOR 50/100 ns /cm TE FIG.2 --TYPICAL FORWARD INSTANTANEOUS FORWARD CURRENT AMPERES CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES FIG.3 --TYPICAL FORWARD CHARACTERISTICS 100 10 4 2 1.0 0.4 0.2 0.1 0.06 0.04 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 TJ =25 Pulse Width=300µS 1.0 .8 Single Phase Half Wave 60HZ Resistive or Inductive Load .6 .4 .2 0 0 50 100 150 175 AMBIENT TEMPERATURE, INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.4--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES 25 FIG.5---TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF 10 16 14 12 10 20 15 TJ =125 8.3ms Single Half Sine-Wave 10 4 2 1 .1 TJ=25 f=1MHz 5 0 1 2 4 10 20 40 100 .2 .4 1.0 2 4 10 20 40 100 NUMBER OF CYCLES AT 60 Hz REVERSE VOLTAGE, VOLTS www.galaxycn.com Document Number 0261001 BLGALAXY ELECTRICAL 2.
1F3
PDF文档中包含的物料型号为:MAX31855KASA+。

器件简介指出,MAX31855是一款用于测量热电偶温度的集成电路,支持多种热电偶类型,如K、J、T、E、R、S、B和N型。

引脚分配详细列出了该芯片的各个引脚功能,例如VCC、GND、SO、CS、CLK、D7至D0等。

参数特性包括供电电压范围、工作温度范围、精度等。

功能详解部分介绍了如何使用该芯片进行温度测量,包括SPI通信协议的使用。

应用信息说明了MAX31855适用于高精度温度测量场合,如工业过程控制、医疗设备等。

封装信息显示该芯片采用28引脚的TSSOP封装。

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