1H8G

BL GALAXY ELECTRICAL 1H1G - - - 1H8G VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A HIGH EFFICIENCY RECTIFIER FEATURES Diffused junction Glass passivated chip junction High current capability High reliability High surge current capability MECHANICAL DATA Case:JEDEC R-1,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 P olarity: Color band denotes cathode W eight: 0.007 ounces,0.20 grams Mounting position: Any R-1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS R atings at 25 a m bient tem perature unles s otherwise specified. Single phase,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. 1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G UNITS Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectif ied current 9.5mm lead length, @TA =75 V RRM V RMS V DC IF(AV) 50 35 50 100 70 100 200 140 200 300 210 300 1.0 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V A Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @TJ =125 IFSM 30 .0 A Maximum instantaneous f orw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 (Note1) (Note2) (Note3) VF IR t rr CJ RθJA TJ TSTG 1.0 1.3 5.0 100.0 50 20 60 - 55 ---- + 150 - 55 ---- + 150 1.7 V A Maximum r everse recovery time Typical junction capacitance Typical thermal resistance 70 15 ns pF /W Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0269027 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES 1H1G - - - 1H8G FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. 0 (+) 25VDC (approx) (-) 1 NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) -0.25A -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 20/30 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT 1H1G-1H3G 1H6G-1H8G FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD CURRENT 10 1.0 0.75 1.0 AMPERES AMPERES 1H4G-1H5G 0.5 Single Phase Half Wave 60H Z Resistive or Inductive Load 0.1 TJ=25 Pulse Width=300 µS 0.25 0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0 25 50 75 100 125 150 175 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT FIG.5 -- PEAK FORWARD SURGE CURRENT 30 JUNCTION CAPACITANCE,pF 200 100 60 40 20 10 6 4 1H6G-1H8G 1H1G-1H5G 24 18 AMPERES TJ =125 8.3ms Single Half Sine-Wave 12 TJ=25℃ 2 1 6 0.1 0.2 0.4 1 2 4 10 20 40 100 0 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60Hz www.galaxycn.com Document Number 0269027 BLGALAXY ELECTRICAL 2.