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1N4003

1N4003

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    1N4003 - PLASTIC SILICON RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4003 数据手册
BL G ALAXY ELECTRICAL PLAST IC SILICON RECT IFIER FEATURES L ow cos t D iffus ed junction L ow leakage L ow forward voltage drop H igh current capability E as ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents The plas tic m aterial carries U/L recognition 94V-0 1N4001- - - 1N4007 VOLT AGE RANGE: 50 --- 1000 V CURRENT : 1.0 A DO - 41 MECHANICAL DATA C as e:JEDEC DO--41,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 P olarity: Color band denotes cathode W eight: 0.012ounces ,0.34 gram s Mounting pos ition: Any M AXIM UM RAT INGS AND ELECT RICAL CHARACT ERIST ICS R atings at 25 a m bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. 1N 4001 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard rectif ied current 9.5mm lead lengths, Peak f orw ard surge current 8.3ms s ingle half -s ine-w av e superimposed on rated load @TJ =125 @TA =75 1N 1N 1N 1N 1N 1N UNITS 4002 4003 4004 4005 4006 4007 100 70 100 200 140 200 400 280 400 1.0 600 420 600 800 560 800 1000 700 1000 V V V A VRRM V R MS VDC IF (AV) 50 35 50 IF SM 40.0 A Maximum instantaneous f orw ard voltage @ 1.0 A Maximum reverse current a t rated DC blocking voltage Typical junction capacitance Typical thermal resistance @TA =25 @TA =100 (Note1) (Note2) VF IR CJ R θ JA TJ TSTG 1.0 5.0 50.0 15 50 - 55 ---- + 150 - 55 ---- + 150 V A pF /W Operating junction temperature range Storage temperature range NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal resistance from junction to ambient. www.galaxycn.com Document Number 0260002 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT 1N4001 - - - 1N4007 FIG.2 -- TYPICAL JUNCTION CAPACITANCE 100 10 TJ=25 Pulse Width=300us 4 2 1.0 JUNCTION CAPACITANCE,pF 100 60 40 20 10 f=1MHz TJ=25 AMPERES 0.4 0.2 0.1 0.06 0.04 0.02 4 2 1 .1 .2 0.01 0.6 0.8 1.0 1.2 1.4 1.6 .4 1.0 2 4 10 20 40 100 INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS FIG.3 -- PEAK FORWARD SURGE CURRENT FIG.4 -- FORWARD DERATING CURVE PEAK FORWARD SURGE CURRENT 50 AVERAGE FORWARD CURRENT AMPERES 1.0 40 30 TJ =125 C 8.3ms Single Half sine-wave 0 .8 .6 AMPERES 20 .4 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375"(9.5)Lead Length 10 .2 0 1 10 100 0 25 50 75 100 125 150 175 200 NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE, www.galaxycn.com Document Number 0260002 BLGALAXY ELECTRICAL 2.
1N4003
1. 物料型号: - 1N4001至1N4007系列是塑封硅整流二极管。

2. 器件简介: - 这些器件是低成本的硅整流二极管,具有扩散结、低漏电流、低正向电压降和高电流能力等特点,且易于用氟利昂、酒精、异丙醇等溶剂清洁。塑料材料符合UL94V-0认证。

3. 引脚分配: - 轴向引线,可焊性符合MIL-STD-202方法208,极性通过色带表示阴极,重量为0.012盎司或0.34克。

4. 参数特性: - 最大重复峰值反向电压(VRRM)从50V到1000V不等,最大RMS电压(VRMS)从35V到700V不等,最大直流阻断电压(Voc)与VRRM相同,最大平均整流电流(IF(AV))为1.0A,峰值正向浪涌电流(IFSM)为40.0A,最大瞬时正向电压(VF)为1.0V,最大反向电流(IR)为5.0/50.0A,典型结电容(CJ)为15pF,典型热阻(ReJA)为50°C/W,工作结温范围(TJ)为-55°C至+150°C,存储温度范围(TSTG)与工作结温范围相同。

5. 功能详解: - 该系列二极管适用于单相半波60Hz的电阻性或感性负载,对于电容器负载需降低20%的额定值。

6. 应用信息: - 1N4001至1N4007系列二极管由于其低成本和良好的电气特性,通常用于低功率整流应用。

7. 封装信息: - 封装形式为DO-41,符合JEDEC DO-41标准,为模塑塑料封装。
1N4003 价格&库存

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1N4003-T
  •  国内价格
  • 1+0.1755
  • 10+0.162
  • 30+0.1593
  • 100+0.1512

库存:0