0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
1N4754

1N4754

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    1N4754 - ZENER DIODES - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
1N4754 数据手册
BL FEATURES power rating. GALAXY ELECTRICAL ZENER DIODES 1N4728 --- 1N4764 POWER DISSIPATION: 1.0 W Silicon planar power zener diodes For use in stabilizing and clipping circuits with high DO-41(GLASS) Standard zener voltage tolerance is ±10%. Add s uffix "A" for ±5% tolerance. other zener voltage and tolerances are available upon request. MECHANICAL DATA Case:DO-41, glass case Terminals: solderable per MIL-STD-202, method 208 Polarity: cathode band Marking: type number Approx. weight: 0.35 grams. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. SYMBOL Zener current (see Table "Characteristics") VALUE UNIT Pow er dissipation @ Tamb 50 PDiss IZ TJ Ts RThJA 1.01) PV/VZ 200 -55---+200 100 W Z-current mA Junction temperature Storage temperature range Junction ambient I=9.5mm(3/8 ), TL=constant K/W SYMBOL Forw ard voltage at IF=200mA MIN TYP MAX 1.2 UNIT V VF www.galaxycn.com Document Number 0284004 BLGALAXY ELECTRICAL 1. ELECTRICAL CHARACTERISTICS Nominal zener voltage 1) Type V z@IZT (V ) 1N4728 1N4729 1N4730 1N4731 1N4732 1N4733 1N4734 1N4735 1N4736 1N4737 1N4738 1N4739 1N4740 1N4741 1N4742 1N4743 1N4744 1N4745 1N4746 1N4747 1N4748 1N4749 1N4750 1N4751 1N4752 1N4753 1N4754 1N4755 1N4756 1N4757 1N4758 1N4759 1N4760 1N4761 1N4762 1N4763 1N4764 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 IZT (mA ) 76 69 64 58 53 49 45 41 37 34 31 28 25 23 21 19 17 15.5 14 12.5 11.5 10.5 9.5 8.5 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 2.8 2.5 IZT @Z ZT ( Ω) 10 10 9 9 8 7 5 2 3.5 4.0 4.5 5.0 7 8 9 10 14 16 20 22 23 25 35 40 45 50 60 70 80 95 110 125 150 175 200 250 350 Z ZK@IZK ( Ω) 400 400 400 400 500 550 600 700 700 700 700 700 700 700 700 700 700 700 750 750 750 750 750 1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000 3000 IZK (m A) (TA=25 ) Max surge current 8.3ms IR@Tamb =25 (mA ) 1380 1260 1190 1070 970 890 810 730 660 605 550 500 454 414 380 344 304 285 250 225 205 190 170 150 135 125 115 110 95 90 80 70 65 60 55 50 45 Maximum regulator current 2) IZM @ Tamb =50 (mA ) 276 252 234 217 193 178 462 146 133 121 110 100 91 83 76 69 61 57 50 45 41 38 34 30 27 25 23 22 19 18 16 14 13 12 11 10 9 Test current Maximum dynamic impedance Maximum reverse leakage current IR ( μA ) 100 100 50 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 +1 @V R (V ) 1 1 1 1 1 1 2 3 4 5 6 7 7.6 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56.0 62.2 69.2 79.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 1)Based on dc_m easurem ent at theral equilibrium while m aitaining the lead tem perature (TL) at 30 2)Valid prov ided that electrodes at a distance of 10 m m f orm case kept at am bient tem perature. *)Additionnal m easurem ent of v oltage gruup 9v 1 to 75 at 95% V ZMIN 3 5nA at TJ25 ,9.5m m (3/8")f rom the D iode body . www.galaxycn.com Document Number 0284004 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- BREAKDOWN CHARACTERISTICS 1N4728 -- 1N4764 mA 100 5 10 15 20 25 30 V 80 IZ 60 40 20 0 FIG.2 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE W 1.0 1N4728 1N4733 1N4735 1N4742 1N4744 1N4747 1N4731 1N4732 1N4739 1N4741 1N4748 1N4749 1N4750 VZ 0.8 Ptot 0.6 0.4 0.2 0 0 100 Tamb 200℃ www.galaxycn.com Document Number 0284004 BLGALAXY ELECTRICAL 3.
1N4754 价格&库存

很抱歉,暂时无法提供与“1N4754”相匹配的价格&库存,您可以联系我们找货

免费人工找货
1N4754A
  •  国内价格
  • 1+0.09833
  • 10+0.08978
  • 30+0.08807

库存:140

1N4754A-TR
  •  国内价格
  • 20+0.34194
  • 100+0.31085
  • 500+0.29012
  • 1000+0.2694
  • 5000+0.24454
  • 10000+0.23417

库存:100