1N5059

BL F EATURES GALAXY ELECTRICAL 1N5059---1N5062 VOLTAGE RANGE: 200---800 V CURRENT: 2.0 A PLASTIC SILICON RECTIFIER L ow cos t D iffus ed junction G lass passivated chips L ow forward voltage drop H igh crrent capability E as ily cleaned with Freon,Alcohol, ls opropand and s im ilar s olvents D O - 15 MECHANICAL DATA C as e: JEDEC DO-15 , m olded plas tic Term inals : Axial leads ,s olderable per MIL-STD -202,Method 208 P olarity: Color band denotes cathode W eight: 0.01 4 o unces , 0.3 9 gram s Mounting: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 a m bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%. 1N5059 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectif ied current 9.5mm lead length, @TA =50 1N5060 400 280 400 2 .0 1N5061 600 420 600 1N5062 800 560 800 UNITS V V V A VRRM V RMS V DC IF(AV) 200 140 200 Peak f orw ard surge current 10ms single half -sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage Maximum reverse current @TJ =125 @1.0A @ 2.5A @TA =25 (Note1) (Note2) (Note3) IFSM VF IR t rr CJ RθJA TJ TSTG 5 0.0 1.0 1.15 1.0 100 4.0 40 45 - 5 5 ----- + 175 - 5 5 ----- + 175 A V A µs pF at rated DC blocking voltage @TA =150 Maximum reverse recovery time Typical junction capacitance Typical thermal resistance Operating junction temperature range Storage temperature range NOTE: 1.Measured with I F =0.5A, I R=1A, I rr=0.25A. K/W 2. Measured at 1.0MH Z a nd applied rev erse v oltage of 0V DC. 3. Thermal resistance from junction to ambient. www.galaxycn.com Document Number 0260043 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES 1N5059---1N5062 FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 50 N 1. 10 N 1. +0.5A 0 PULSE GENERATOR (NOTE2) D.U.T. (+) 25VDC (approx) (-) -0.25A 1 NONINDUCTIVE OSCILLOSCOPE (NOTE1) -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIMEBASEFOR 2.0 µ s/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 20 10 FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT 2.0 1.6 1.2 0.8 0.4 0 Single Phase Half Wave 50HZ Resistive or Inductive Load T J =25 Pulse Width=300 µ S 1.0 AMPERES 0.1 0.01 0 25 50 75 100 125 150 175 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.4 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES FIG.5--TYPICAL JUNCTION CAPACITANCE 50 40 30 TJ=25℃ 10ms Single Half Sine-Wave JUNCTION CAPACITANCE,pF 200 100 60 40 20 10 6 4 　　　　 TJ=25 20 10 0 2 1 1 5 10 50 100 0.1 0.2 0.4 1 2 4 10 20 40 100 NUMBER OF CYCLES AT 50Hz REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0260043 BLGALAXY ELECTRICAL 2.