1N5405

1N5405

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    1N5405 - PLASTIC SILICON RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5405 数据手册
BL FEATURES Low cost GALAXY ELECTRICAL 1N5400 - - - 1N5408 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A PLASTIC SILICON RECTIFIER DO - 27 Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. 1N 1N 1N 1N 1N 1N 1N 1N 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA =75 UNITS V V V A VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 3.0 500 350 500 600 420 600 800 560 800 1000 700 1000 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 200.0 A Maximum instantaneous forw ard voltage @ 3.0 A Maximum reverse current at rated DC blocking voltage Typical junction capacitance Typical thermal resistance @TA =25 @TA=100 (Note1) (Note2) VF IR CJ RθJA TJ 1.0 10.0 100.0 35 20 - 55 ---- + 150 - 55 ---- + 150 V A pF /W Operating junction temperature range Storage temperature range TSTG NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 2. Thermal resistance f rom junction to ambient. www.galaxycn.com Document Number 0260009 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT 1N5400 - - -1N5408 FIG.2 -- PEAK FORWARD SURGE CURRENT 4 PEAK FORWARD SURGE CURRENT AMPERES 200 3 150 TJ=125℃ 8.3ms Single Half Sine-Wave 2 AMPERES 1 Single Phase Half Wave 60HZ Resistive or Inductive Load 100 50 0 0 25 50 75 100 125 150 0 1 2 4 8 10 20 40 60 100 AMBIENT TEMPERATURE, NUMBER OF CYCLES 60Hz FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL JUNCTION CAPACITANCE 10 INSTANTANEOUS FORWARD CURRENT JUNCTION CAPACITANCE, pF 100 60 40 20 10 f=1MHz TJ=25 1.0 AMPERES 0.1 TJ=25 C Pulse Width =300us 0 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 .01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE, VOLTS www.galaxycn.com Document Number 0260009 BLGALAXY ELECTRICAL 2.
1N5405
1. 物料型号: - 型号为1N5400至1N5408的PLASTIC SILICON RECTIFIER(塑料硅整流器)。

2. 器件简介: - 这些器件是低成本、低漏电流、低正向电压降、高电流能力的整流器。它们可以很容易地用酒精、异丙醇和类似的溶剂清洁。塑料材料具有UL认可的94V-0等级。

3. 引脚分配: - 器件采用JEDEC DO-27标准封装,轴向引脚,可按MIL-STD-202方法208进行焊接。极性通过色带表示阴极。

4. 参数特性: - 最大RMS电压(VRMS)范围从35V至700V不等,直流电压(VDc)从50V至200V不等。 - 最大瞬时正向电压(VF)为1.0V,最大反向电流(IR)范围从10uA至100uA。 - 典型结电容(CJ)为35pF,典型热阻(RBJA)为20°C。

5. 功能详解: - 这些整流器适用于25℃环境温度下的单相、半波、60Hz的电阻性或感性负载。对于电容性负载,需要降低20%的额定值。

6. 应用信息: - 适用于需要整流功能的电路,如电源整流、信号整流等。

7. 封装信息: - 封装为DO-27,重量为0.041盎司(1.15克),可任意位置安装。
1N5405 价格&库存

很抱歉,暂时无法提供与“1N5405”相匹配的价格&库存,您可以联系我们找货

免费人工找货