0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
1N5711

1N5711

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    1N5711 - SMALL SIGNAL SCHOTTKY DIODES - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
1N5711 数据手册
BL FEATURES GALAXY ELECTRICAL 1N5711 VOLTAGE RANGE: 7 0 V POWER DISSIPATION: 400 mW SMALL SIGNAL SCHOTTKY DIODES For general purpos e applications Metal s ilicon s chottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fas t s witching m ake it ideal for protection of MOS devices ,s teering,bias ing and coupling diodes for fas t s witching and low logic level applications DO - 35(GLASS) MECHANICAL DATA C as e:JEDEC DO--35,glas s cas e P olarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Symbols Peak reverse voltage Pow er dissipation (Inf inite Heat Sink) Maximum single cycle surge 10 Junction tenperature Storage temperature range s square w ave Value 7 0.0 400 1) UNITS V zm W A V RRM P tot IFSM TJ TSTG 2.0 1 25 c-55 ---+ 150 1)V alid provided that leads at a distance of 4mm f rom case are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherw ise specified) Symbols Reverse breakdow n voltage Leakage current Forw ard voltage drop @ V R=50V @ IF=1mA IF=15mA Junction capacitance @ V R=0V ,f=1MHz Reverse recovery time @ IF=IR=5mA ,recover to 0.1 IR Termal resistance junction to ambient air @ IR=10 A Min. 70.0 Typ. Max. UNITS V VR IR VF CJ t rr RθJA 200.0 0.41 1.0 2 1 0.3 anA V pF ns /m W www.galaxycn.com Document Number 0265001 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES 1N5711 FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD. XXXXXXXX-VOLTAGE FOR PRIMARY CONDUCTION THROUGH THE XXXXXXXX-SCHOTTKY BARRIER FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF XXXXX COMBINATION SCHOTTKY BARRIER AND PN XXXXX JUNCTION GUARD RING mA 10 5 2 mA 100 80 IF 1 IF 60 5 2 0.1 40 5 20 2 0.01 0 0.5 1 0 0 0 .5 1 V V VF VF FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT XXXXXXXXXVARIATION TEMPERATURES FIG.4 -- TYPICAL CAPACITANCE CURVE AS A XXXXX- JUNCTION OF REVERSE VOLTAGE µA 100 5 2 10 pF 150 125 ℃ 2 TJ=25 100 ℃ 75 ℃ 50 1 IR CJ 5 2 1 5 2 0 .1 5 2 0 .0 1 0 10 20 30 40 50 25 ℃ V 0 0 10 20 30 40 50 V VR VR www.galaxycn.com Document Number 0265001 BLGALAXY ELECTRICAL 2.
1N5711 价格&库存

很抱歉,暂时无法提供与“1N5711”相匹配的价格&库存,您可以联系我们找货

免费人工找货
1N5711
  •  国内价格
  • 1+0.28409
  • 100+0.26515
  • 300+0.24621
  • 500+0.22727
  • 2000+0.2178
  • 5000+0.21212

库存:0

1N5711WS-7-F
  •  国内价格
  • 1+0.5174
  • 10+0.4776
  • 30+0.46964
  • 100+0.44576

库存:145

1N5711W-7-F
  •  国内价格
  • 1+0.26081
  • 30+0.2515
  • 100+0.24218
  • 500+0.22356
  • 1000+0.21424
  • 2000+0.20865

库存:0