1N5817

1N5817

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    1N5817 - SCHOTTKY BARRIER RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5817 数据手册
BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses H igh surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0 1N5817--- 1N5819 VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A DO - 41 MECHANICAL DATA C ase:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. 1N5817 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA =75 1N5818 30 21 30 1.0 1N5819 40 28 40 UNITS V V V A V RRM V RMS VDC IF(AV) 20 14 20 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =70 IFSM 0.45 0.75 25.0 A Maximum instantaneous forw ard voltage @ 1.0A z (Note 1) @ 3.0A Maximum reverse current at rated DC blocking voltage Typical junction capacitance Typical thermal resistance @TA =25 @TA =100 (Note2) (Note3) VF IR CJ Rθ JA TJ TSTG 0.55 0.875 1.0 10.0 110 50 - 55 ---- + 125 - 55 ---- + 150 0.60 0.90 V mA pF /W Operating junction temperature range Storage temperature range NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle. www.galaxycn.com 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient Document Number 0266001 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES 1N5817 --- 1N5819 FIG.1 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT PEAK FORWARD SURGE CURRENT AMPERES FIG.2 -- PEAK FORWARD SURGE CURRENT 1.0 30 25 20 25 10 5 0 1 10 100 TJ=TJMAX 8.3ms Single Half Sine-Wave 0.75 AMPERES 0.5 0.25 Resistive or Inductive Load 0.375"(9.5mm)Lead Length 0 0 25 50 75 100 125 150 LEAD TEMPERATURE, NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL INSTANTANEOUS FORWARD X -CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT FIG.4 -- TYPICAL JUNCTION CAPACITANCE 20 400 CAPACITANCE, pF 10 1N 5 81 7 1N 5 81 9 TJ=25℃ f=1.0MHz Vsig=50mVp-p AMPERES 100 1 1N 5 81 8 T J = 25 P ulse w id th= 300 1 % D uty C yc le s 10 0.1 1 10 100 .1 .1 .3 .5 .7 .9 1.1 1.3 1.5 1.7 1.9 2.1 INSTANTANEOUS FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0266001 BLGALAXY ELECTRICAL 2.
1N5817
### 物料型号 - 1N5817:肖特基势垒整流器,电压范围20V,电流1.0A。 - 1N5818:肖特基势垒整流器,电压范围30V,电流1.0A。 - 1N5819:肖特基势垒整流器,电压范围40V,电流1.0A。

### 器件简介 这些器件是肖特基势垒整流器,具有金属-半导体结构和防护环。它们采用外延结构,具有低正向电压降和低开关损耗,适用于低电压、高频逆变器、自由轮淆和极性保护应用。

### 引脚分配 - 引脚类型:轴向引线,可焊接,符合MIL-STD-202方法208。 - 极性:色带表示阴极。

### 参数特性 - 最大重复峰值反向电压(VRRM):1N5817为20V,1N5818为30V,1N5819为40V。 - 最大RMS电压(VRMS):1N5817为14V,1N5818为21V,1N5819为28V。 - 最大直流阻断电压(Vpc):与VRRM相同。 - 最大平均正向整流电流(IF(AV)):1.0A。 - 峰值正向浪涌电流(IFSM):1N5818为25.0A。 - 最大瞬时正向电压(VF):1N5817为0.45V至0.75V,1N5818为0.55V至0.875V,1N5819为0.60V至0.90V。 - 最大反向电流(IR):1N5818为1.0mA至10.0mA。 - 典型结电容(CJ):1N5817为110pF。 - 典型热阻(RBJA):50°C/W。 - 工作结温范围(TJ):-55°C至+125°C。 - 存储温度范围(TSTG):-55°C至+150°C。

### 功能详解 这些器件主要用于整流应用,能够处理低电压和高频率的环境,具有高浪涌能力和低正向电压降,适合用于保护电路免受反向电压损害。

### 应用信息 适用于低电压、高频逆变器、自由轮淆和极性保护应用。

### 封装信息 - 封装类型:JEDEC DO-41,塑封。 - 材料:塑料材料,符合UL 94V-0标准。 - 重量:0.012盎司,0.34克。 - 安装位置:任意位置。
1N5817 价格&库存

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