1N5819S

1N5819S

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    1N5819S - SCHOTTKY BARRIER RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5819S 数据手册
BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses H igh surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0 1N5817S - - - 1N5819S VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A A - 405 MECHANICAL DATA C ase:JEDEC A --405,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,method 208 Polarity: Color band denotes cathode Weight: 0.008 ounces,0.23 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. 1N5817S Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA =75 1N5818S 30 21 30 1.0 1N5819S 40 28 40 UNITS V V V A V RRM V RMS VDC IF(AV) 20 14 20 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =70 IFSM 0.45 0.75 25.0 A Maximum instantaneous forw ard voltage @ 1.0A z (Note 1) @ 3.0A Maximum reverse current at rated DC blocking voltage Typical junction capacitance Typical thermal resistance @TA =25 @TA =100 (Note2) (Note3) VF IR CJ Rθ JA TJ TSTG 0.55 0.875 1.0 10.0 110 50 - 55 ---- + 125 - 55 ---- + 150 0.60 0.90 V mA pF /W Operating junction temperature range Storage temperature range NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle. www.galaxycn.com 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient Document Number 0266038 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES 1N5817S - - - 1N5819S FIG.1 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT PEAK FORWARD SURGE CURRENT AMPERES FIG.2 -- PEAK FORWARD SURGE CURRENT 1.0 30 25 20 25 10 5 0 1 10 100 TJ=TJMAX 8.3ms Single Half Sine-Wave 0.75 AMPERES 0.5 0.25 Resistive or Inductive Load 0.375"(9.5mm)Lead Length 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL INSTANTANEOUS FORWARD X -CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT FIG.4 -- TYPICAL JUNCTION CAPACITANCE 20 400 CAPACITANCE, pF 10 1N5817S 1N5819S TJ=25℃ f=1.0MHz Vsig=50mVp-p AMPERES 100 1 1N5818S T J = 25 P ulse w id th= 300 1 % D uty C yc le s 10 0.1 1 10 100 .1 .1 .3 .5 .7 .9 1.1 1.3 1.5 1.7 1.9 2.1 INSTANTANEOUS FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0266038 BLGALAXY ELECTRICAL 2.
1N5819S
1. 物料型号: - 型号为1N5817S至1N5819S,这些是肖特基势垒整流器。

2. 器件简介: - 这些器件具有金属-半导体结和保护环,采用外延结构,具有低正向电压降、低开关损耗、高浪涌能力,适用于低电压、高频逆变器自由轮转和极性保护应用。

3. 引脚分配: - 根据机械数据部分,这些器件的封装为JEDEC A-405,塑封,轴向引线,可焊性符合MIL-STD-202,method 208标准。极性通过色带表示阴极。

4. 参数特性: - 最大重复峰值反向电压(VRRM)分别为20V、30V、40V; - 最大RMS电压(VRMS)分别为14V、21V、28V; - 最大直流阻断电压(Vpc)分别为20V、30V、40V; - 最大平均正向整流电流(IF(AV))为1.0A; - 峰值正向浪涌电流(IFSM)分别为25.0A; - 最大瞬时正向电压(VF)在1.0A和3.0A条件下分别为0.45V/0.75V、0.55V/0.875V、0.60V/0.90V; - 最大反向电流(IR)在25°C和100°C条件下分别为1.0mA/10.0mA; - 典型结电容(CJ)为110pF; - 典型热阻(RBJA)为50°C/W; - 工作结温范围为-55°C至+125°C; - 存储温度范围为-55°C至+150°C。

5. 功能详解: - 这些肖特基整流器主要用于低电压、高频逆变器的自由轮转和极性保护,具有低正向电压降和高浪涌能力。

6. 应用信息: - 适用于低电压、高频逆变器自由轮转和极性保护应用。

7. 封装信息: - 封装类型为JEDEC A-405,塑封,轴向引线。
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