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1N6263

1N6263

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    1N6263 - SMALL SIGNAL SCHOTTKY DIODE - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
1N6263 数据手册
BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE FEATURES For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications 1N6263 VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW DO - 35(GLASS) MECHANICAL DATA Case:JEDEC DO--35,glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Symbols Peak reverse voltage Pow er dissipation (Infinite Heat Sink) Maximum single cycle surge 10µs square w ave Junction tenperature Storage temperature range 1)Valid provided that electrodes are kept at ambient temperature. Value 60.0 4001) 2.0 125 c-55 ---+ 150 UNITS V mW A VRRM Ptot IFSM TJ TSTG ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherw ise specified) Symbols Reverse breakdow n voltage Leakage current @ VR=50V IF=1mA IF=15mA Junction capacitance @ VR=0V,f=1MHz @ IR=10 A Min. 60.0 Typ. Max. UNITS V VR IR VF VF CJ trr RθJA 200.0 0.41 1.0 2.2 1 0.3 nA V V pF Forw ard voltage drop @ Reverse recovery time @ IF=IR=5mA,recover to 0.1 IR Termal resistance junction to ambient air ns /mW www.galaxycn.com Document Number 0265002 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES 1N6263 FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD. XXXXXXXX-VOLTAGE FOR PRIMARY CONDUCTION THROUGH THE XXXXXXXX-SCHOTTKY BARRIER FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF XXXXX COMBINATION SCHOTTKY BARRIER AND PN XXXXX JUNCTION GUARD RING mA 10 5.0 2.0 mA 100 80 I F 1.0 0.5 0.2 0.1 0.05 IF 60 40 20 0.02 0.01 0 0.5 VF 1 V 0 0 0.5 VF 1 V FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT XXXXXXXXXVARIATION TEMPERATURES FIG.4 -- TYPICAL CAPACITANCE CURVE AS A XXXXX- JUNCTION OF REVERSE VOLTAGE A 100 50 20 10 100 ℃ 150 125 ℃ pF 2 TJ=25 IR 5 2 1 CJ 75℃ 50 1 0.5 0.2 0.1 0.05 0.02 0.01 25℃ 0 10 20 30 40 50 V 0 VR 0 10 20 30 40 50V VR www.galaxycn.com Document Number 0265002 BLGALAXY ELECTRICAL 2.
1N6263
PDF文档中包含以下信息:

1. 物料型号:型号为EL817,是一款光隔离集成电路。

2. 器件简介:EL817是一种光隔离集成电路,用于开关和驱动应用,具有高输入输出隔离电压和快速响应时间。

3. 引脚分配:EL817有6个引脚,包括输入、输出和Vcc引脚。

4. 参数特性:包括工作电压、工作电流、隔离电压等。

5. 功能详解:EL817内部包含光发射器和光接收器,实现电信号的光隔离传输。

6. 应用信息:适用于工业控制、医疗设备等领域。

7. 封装信息:EL817采用DIP-6封装。
1N6263 价格&库存

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1N6263W-7-F
  •  国内价格
  • 1+0.24126
  • 30+0.23264
  • 100+0.22403
  • 500+0.20679
  • 1000+0.19818
  • 2000+0.19301

库存:2581