2PD601AW

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES Collector Current.(IC= 100mA） Excellent HFE Linearity. Power dissipation.(PC=200mW) Production specification 2PD601AW Pb Lead-free APPLICATIONS General purpose application. ORDERING INFORMATION Type No. 2PD601AW Marking 6D/6E/6F SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Value 60 Units V Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous 50 6 100 V V mA Collector Dissipation Junction and Storage Temperature 200 -55~150 mW ℃ Document number: BL/SSSTF028 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Production specification 2PD601AW ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=60V,IE=0 VEB=5V,IC=0 VCE=10V,IC=2mA 2PD601AQW 2PD601ARW 2PD601ASW VCE=2V,IC=100mA Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA VCE=6V, IC= 2mA f=100MHz 2PD601AQW 2PD601ARW 2PD601ASW 160 210 290 90 0.5 V MIN 60 50 6 0.01 0.01 TYP MAX UNIT V V V μA μA DC current gain hFE 260 340 460 Transition frequency fT 100 120 140 MHz Document number: BL/SSSTF028 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package Production specification 2PD601AW SOT-323 SOT-323 Dim A B C D E G H J K Min 1.8 1.15 0.15 0.25 1.2 0.02 2.1 Max 2.2 1.35 0.35 0.40 1.4 0.1 2.3 1.0Typical 0.1Typical All Dimensions in mm PACKAGE INFORMATION Device 2PD601AW Package SOT-323 Shipping 3000/Tape&Reel Document number: BL/SSSTF028 Rev.A www.galaxycn.com 3