2SA1179

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES High breakdown voltage. Production specification 2SA1179 Pb Lead-free APPLICATIONS General purpose application. SOT-23 ORDERING INFORMATION Type No. 2SA1179 Marking M Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -55 -50 -5 -150 200 -55~150 Units V V V mA mW ℃ Document number: BL/SSSTC093 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification 2SA1179 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test conditions IC=-10μA,IE=0 IC=-1mA,IB=0 B MIN -55 -50 -5 TYP MAX UNIT V V V IE=-10μA,IC=0 VCB=-35V,IE=0 VEB=-4V,IC=0 VCE=-6V,IC=-1mA IC=-50mA, IB=-5mA B -0.1 -0.1 200 400 -0.5 -1.0 180 4 μA μA V V MHz pF IC=-50mA, IB=-5mA B VCE=-6V, IC=-10mA VCB=-6V,IE=0,f=1MHz PACKAGE OUTLINE Plastic surface mounted package A E SOT-23 SOT-23 Dim A B C D E G H C Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J H J K 0.1Typical All Dimensions in mm Document number: BL/SSSTC093 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Silicon Epitaxial Planar Transistor SOLDERING FOOTPRINT Production specification 2SA1179 Unit : mm PACKAGE Device 2SA1179 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC093 Rev.A www.galaxycn.com 3