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2SA812_0712

2SA812_0712

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    2SA812_0712 - Silicon Epitaxial Planar Transistor - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
2SA812_0712 数据手册
BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES Commplementary to 2SC1623. High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) High Voltage: VCEO=-50V Production specification 2SA812 Pb Lead-free APPLICATIONS Audio frequency, general purpose amplifier SOT-23 ORDERING INFORMATION Type No. 2SA812 Marking M4/M5/M6/M7 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -60 -50 -5 -100 200 -55~150 Units V V V mA mW ℃ Document number: BL/SSSTC010 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification 2SA812 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions IC=-100μA,IE=0 IC=-1mA,IB=0 IE=-100μA,IC=0 VCB=-60V,IE=0 VEB=-5V,IC=0 VCE=-6V,IC=-1mA IC=-100mA, IB=-10mA IC=-1mA, VCE=-6V VCE=-6V, IC=-10mA VCB=-10V,IE=0,f=1MHz -0.58 180 4.5 90 200 MIN -60 -50 -5 -0.1 -0.1 600 -0.3 -0.68 V V MHz pF TYP MAX UNIT V V V μA μA CLASSIFICATION Range Marking M4 OF hFE(1) M5 135-270 M6 200-400 M7 300-600 90-180 Document number: BL/SSSTC010 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification 2SA812 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC010 Rev.A www.galaxycn.com 3 BL Galaxy Electrical Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package Production specification 2SA812 SOT-23 SOT-23 Dim A B C D E G H J K Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 1.0Typical 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device 2SA812 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC010 Rev.A www.galaxycn.com 4
2SA812_0712 价格&库存

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