2SB709A_0712

2SB709A_0712

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    2SB709A_0712 - Silicon Epitaxial Planar Transistor - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB709A_0712 数据手册
BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Production specification 2SB709A Pb Lead-free APPLICATIONS For general amplification complementary to 2SD601A SOT-23 ORDERING INFORMATION Type No. 2SB709A Marking BQ1,BR1,BS1 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO ICP IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak collector Current Collector Current Collector Dissipation Junction and Storage Temperature Value -45 -45 -7 -200 -100 200 -55~150 Units V V V mA mA mW ℃ Document number: BL/SSSTC015 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification 2SB709A ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE VCE(sat) fT Test conditions IC=-10μA,IE=0 IC=-2mA,IB=0 IE=-10μA,IC=0 VCB=-20V,IE=0 VEB=-10V,IC=0 VCE=-10V,IC=-2mA IC=-100mA, IB=-10mA VCB=-10V, IE=-1mA f=200MHz 160 -0.3 80 MIN -45 -45 -7 -0.1 -100 460 -0.5 V MHz TYP MAX UNIT V V V μA μA Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 2.7 pF CLASSIFICATION Range Marking OF hFE(1) 160-260 BQ1 210-340 BR1 290-460 BS1 Document number: BL/SSSTC015 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification 2SB709A TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC015 Rev.A www.galaxycn.com 3 BL Galaxy Electrical Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package Production specification 2SB709A SOT-23 SOT-23 Dim A B C D E G H J K Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 1.0Typical 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device 2SB709A INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC015 Rev.A www.galaxycn.com 4
2SB709A_0712
物料型号: - 型号编号:2SB709A - 封装代码:SOT-23

器件简介: - 2SB709A是一款PNP型硅外延平面晶体管,具有高正向电流转换比(hFE)。 - 采用小型封装,允许设备小型化,并通过胶带包装和弹匣包装实现自动插入。

引脚分配: - 引脚1:发射极(EMITTER) - 引脚2:基极(BASE) - 引脚3:集电极(COLLECTOR)

参数特性: - 集-基电压(VCBO):-45V - 集-发电压(VCEO):-45V - 发-基电压(VEBO):-7V - 峰值集电极电流(IcP):-200mA - 集电极电流(Ic):-100mA - 集电极耗散功率(Pc):200mW - 工作结温和存储温度(TjTstg):-55~150℃

功能详解: - 2SB709A具有高正向电流转换比hFE,最小值为160,典型值为460。 - 直流电流增益hFE的测试条件为VcE=-10V,Ic=-2mA。 - 集-发饱和电压VcE(sat)在Ic=-100mA,IB=-10mA时的典型值是-0.3V。 - 过渡频率fr在VcB=-10V,Ie=-1mA,f=200MHz时的典型值是80MHz。 - 集电极输出电容Cob在VcB=-10V,Ie=0,f=1MHz时的典型值是2.7pF。

应用信息: - 该晶体管适用于一般应用。

封装信息: - 封装类型:塑料表面贴装封装(SOT-23) - 尺寸参数:文档中提供了详细的最小值和最大值。 - 包装:3000/卷带和卷盘包装。
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