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2SC2712

2SC2712

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    2SC2712 - Silicon Epitaxial Planar Transistor - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
2SC2712 数据手册
BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES Low noise:NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. Production specification 2SC2712 Pb Lead-free APPLICATIONS Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC2712 Marking LO▪/LY▪/LG▪/LL▪ Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 60 50 5 150 150 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC021 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob NF Test conditions IC=100μA,IE=0 IC=0.1mA,IB=0 IE=100μA,IC=0 VCB=60V,IE=0 VEB=5V,IC=0 VCE=6V,IC=2mA IC=100mA, IB=10mA VCE=10V, IC= 1mA VCB=10V, IE=0,f=1kHz VCE=6V,IC=0.1mA,f=1kHz Production specification 2SC2712 MIN 60 50 5 0.1 0.1 70 0.1 80 2.0 1.0 3.5 10 700 0.25 V MHz pF dB TYP MAX UNIT V V V μA μA CLASSIFICATION Rank Range Marking OF O 70-140 LO hFE(1) Y 120-240 LY GR 200-400 LG BL 350-700 LL Document number: BL/SSSTC021 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification 2SC2712 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC021 Rev.A www.galaxycn.com 3 BL Galaxy Electrical Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package A E Production specification 2SC2712 SOT-23 SOT-23 Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J E G H H C J K 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device 2SC2712 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC021 Rev.A www.galaxycn.com 4
2SC2712 价格&库存

很抱歉,暂时无法提供与“2SC2712”相匹配的价格&库存,您可以联系我们找货

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2SC2712
  •  国内价格
  • 50+0.045
  • 150+0.03839
  • 1000+0.03177
  • 5000+0.02912

库存:4043

2SC2712
  •  国内价格
  • 50+0.05651
  • 500+0.05105
  • 5000+0.04741
  • 10000+0.04559
  • 30000+0.04377
  • 50000+0.04268

库存:1789

2SC2712-LY
  •  国内价格
  • 1+0.04349
  • 100+0.04059
  • 300+0.03769
  • 500+0.0348
  • 2000+0.03335
  • 5000+0.03248

库存:4159

2SC2712-Y
  •  国内价格
  • 1+0.05039
  • 100+0.04703
  • 300+0.04367
  • 500+0.04031
  • 2000+0.03863
  • 5000+0.03763

库存:969

2SC2712-GR,LF(T
  •  国内价格
  • 50+0.09559
  • 150+0.08093
  • 1000+0.06627
  • 5000+0.0604

库存:3072

2SC2712 Y(120-240)
  •  国内价格
  • 100+0.08625
  • 500+0.08118
  • 1000+0.07357
  • 5000+0.06342
  • 10000+0.05733

库存:1918