BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
Power dissipation:PC=150mW.
Production specification
2SC2859
Pb
Lead-free
APPLICATIONS
Audio frequency general purpose amplifier applications.
SOT-23
ORDERING INFORMATION
Type No. 2SC2859 Marking WO/WY/WG Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO Parameter Collector-Base Voltage Value 35 Units V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
500
mA
PC
Collector Dissipation
150
mW
Tj,Tstg
Junction and Storage Temperature
-55~125
℃
Document number: BL/SSSTC100 Rev.A
www.galaxycn.com 1
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
Production specification
2SC2859
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Cob fT Test conditions IC=100μA,IE=0 IC=1mA,IB=0
B
MIN 35 30 5
TYP
MAX
UNIT V V V
IE=100μA,IC=0 VCB=35V,IE=0 VEB=5V,IC=0 VCE=1V,IC=100mA VCE=6V,IC=400mA IC=100mA, IB=10mA
B
0.1 0.1 70 25 0.1 7 300 0.25 400
μA μA
Collector-emitter saturation voltage Collector output capacitance Transition frequency
V pF MHz
VCB=6V,IE=0,f=1MHz VCE=10V, IC= 1mA
CLASSIFICATION
Rank Range
OF
O 70-140
hFE(1)
Y 120-240 G 200-400
Document number: BL/SSSTC100 Rev.A
www.galaxycn.com 2
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A E
Production specification
2SC2859
SOT-23
SOT-23
Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45
K
B
1.0Typical
D G
J
E G H
H C
J K
0.1Typical
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE
Device 2SC2859
INFORMATION
Package SOT-23 Shipping 3000/Tape&Reel
Document number: BL/SSSTC100 Rev.A
www.galaxycn.com 3
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