B160

BL FEATURES GALAXY ELECTRICAL B120 - - - B160 REVERSE VOLTAGE: 20 --- 60 V CURRENT: 1.0 A SCHOTTKY BARRIER RECTIFIER ◇ Plastic package has Underwriters Laboratory 111 Flammability Classification 94V-0 ◇ For surface mounted applications ◇ Low profile package ◇ Built-in strain relief ◇ Metal silicon junction, majority carrier conduction ◇ High surge capability ◇ Low power loss,high effciency ◇ For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ◇ Guardring for overvoltage protection o ◇ High temperature soldering guaranteed:250 C/10 111 seconds at terminals DO - 214AC(SMA) MECHANICAL DATA ◇ Case:JEDEC DO-214AC,molded plastic over 1111passivated chip ◇ Terminals:Solder plated, solderable per MIL-STD-750, 1111Method 2026 ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.002 ounces, 0.064 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified B120 Dev ice marking code Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ord rectified current at x TL(SEE FIG.1) Peak forw ard surge current 8.3ms single halfx sine-w ave superimposed on rated load(JEDEC x Method) Maximum instantaneous forw ard voltage at x 1.0A(NOTE.1) Maximum DC reverse current (NOTE.1) x @TA=25oC at rated DC blockjing voltage @TA =100oC B130 30 21 30 B140 40 28 40 1.0 30.0 B150 50 35 50 B120OOOHB130OOOOIB140OOOOIB150 VRRM VRWS VDC I(AV) I FSM VF IR RθJA RθJL 0.5 0.5 10.0 88.0 20.0 - 55 --- +125 - 55 --- +150 20 14 20 B160 OOOOUNITS B160 60 42 60 V V V A A 0.7 V mA Typical thermal resitance (NOTE. 2) Storage temperature range Operating junction x and storage temperature range Storage temperature range o C/W o Tj TSTG C C o NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle 2. P.C.B.mounted with 0.2"X0.2"(5.0X5.0mm 2)c o pper pad areas www.galaxycn.com Document Number 0281013 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- FORWARD DERATING CURVE B120 - - - B160 FIG.2-- PEAK FORWARD SURGE CURRENT 50 1.0 AVERAGE FORWARD CURRENT,AMPERES Resistive or inductive Load PEAK FORWARD SURGE CURRENT,AMPERES 40 TL=100 C 8.3ms Single Half Sine-Wave (JEDEC Method) O 30 0.5 20 0 50 60 P.C.B.MOUNTED ON 0.2X0.2(5.0X5.0mm) COPPERPAD AREAS 10 70 80 90 100 110 120 130 140 150 160 170 0 1 10 100 LEAD TEMPERATURE ℃ NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES 50 TJ=125 C O FIG.4 -- TYPICAL REVERSE CHARACTERISTICS 100 10 B120-B140 B150-B160 10 TJ=100 C O 1 Puise Width=300 1%DUTY CYCLE S 1 TJ=125 C 0 0.1 TJ=75 C 0 0.1 TJ=25 C O 0.01 TJ=25 0C 0.01 0 B120-B140 B150-B160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.001 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,％ FIG.5--TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF 400 TJ=25 C f=1.0MHz Vsig=50mVp-p 0 100 10 0.1 B120-B140 B150-B160 1 10 100 REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0281013 BLGALAXY ELECTRICAL 2.