BAV102

BL FEATURES GALAXY ELECTRICAL BAV100---BAV103 VOLTAGE RANGE: 50-200 V CURRENT: 250 mA SMALL SIGNAL SWITCHING DIODE MINI-MELF ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation Cathode indification φ .5±0.1 1 MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams 3.4 +0.3 -0.1 0.4±0.1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ℃,ambient temperature unless otherwise specified. ABSOLUTE MAXIMUM RATINGS AND THERMAL RESISTANCE BAV100 Reverse voltage Repetitive peak reverse voltage Forward current Forward surge current t p=1s Power dissipation Thermal resistance junction to ambient Thermal resistance junction to lead Junction temperature Storage temperature range 1) BAV101 100 120 0.25 1.0 500 5001) 350 175 BAV102 150 200 BAV103 200 250 Unit V V A A mW K/W K/W ℃ ℃ VR VRRM I(AV) IFSM PV RθJA RθJL Tj TSTG 50 60 - 65 --- + 175 Device mounted on PC board 50mm×50mm×1.6mm . www.galaxycn.com Document Number 0268017 BLGALAXY ELECTRICAL 1. ELECTRICAL CHARACTERISTICS Parameter Forward voltage Reverse current IF=100mA VR=50V,TJ=25℃ VR=50V,TJ=100℃ VR=100V,TJ=25℃ VR=100V,TJ=100℃ VR=150V,TJ=25℃ VR=150V,TJ=100℃ VR=200V,TJ=25℃ VR=200V,TJ=100℃ Breakdown voltage BAV100 BAV100 BAV101 BAV101 BAV102 BAV102 BAV103 BAV103 BAV100 BAV101 BAV102 BAV103 Diode capacitance Differential forward resistance Reverse recovery time VR=0,f=1MHZ IF=10mA IF=IR=30mA,iR=3mA,RL=100Ω CD rf trr V(BR) IR Test Conditions Symbol Min VF 60 120 200 250 - Typ 1.5 5 - Max 1 100 15 100 15 100 15 100 15 50 Unit V nA µA nA µA nA µA nA µA V V V V pF Ω ns IR=100mA,tp/T=0.01,tp=0.3ms www.galaxycn.com Document Number 0268017 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES FIG 1. REVERSE CURRENT VS. JUNCTION TEMPERATURE BAV100 - - - BAV103 FIG 2. FORWARD CURRENT VS. FORWARD VOLTAGE REVERSE CURRENT ( µ A ) 1000 1000 Forward Current ( mA ) 100 Scattering Limit 10 Tj = 25°C 100 Scattering Limit 10 1 VR = VRRM 0.1 0.01 0 40 80 120 1 0.1 160 200 0 0.4 0.8 1.2 1.6 2.0 JUNCTION TEMPERTURE ( ) Forward Voltage ( V ) FIG 3. DIFFERENTIAL FORWARD RESISTANCE VS. FORWARD CURRENT DIFFERENTIAL FORWARD RESISTANCE, W 1000 100 Tj = 25°C 10 1 0.1 1 10 100 FORWARD CURRENT ( mA ) www.galaxycn.com Document Number 0268017 BL GALAXY ELECTRICAL 3.