BC847A

BC847A

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    BC847A - NPN general purpose Transistor - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
BC847A 数据手册
BL Galaxy Electrical NPN general purpose Transistor FEATURES High current gain. Excellent hFE linearity . Low noise between 30Hz and 15kHz. For AF input stages and driver applications. Production specification BC846/847/848 Pb Lead-free APPLICATIONS General purpose switching and amplification. SOT-23 ORDERING INFORMATION Type No. BC846A/B BC847A/B/C BC848A/B/C Marking 1A/1B 1E/1F/1G 1J/1K/1L Package Code SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO IC PC Tj,Tstg Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Parameter Collector-Base Voltage BC846 BC847 BC848 BC846 BC847 BC848 BC846 BC847 BC848 Value 80 50 30 65 45 30 6 6 5 0.1 200 -65~150 Units V V V A mW ℃ Document number: BL/SSSTC043 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN general purpose Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ Parameter Collector-base breakdown voltage BC846 BC847 BC848 BC846 BC847 BC848 BC846 BC847 BC848 BC846 BC847 BC848 BC846 BC847 BC848 Production specification BC846/847/848 unless otherwise specified MIN 80 50 30 65 45 30 6 6 5 0.1 TYP MAX UNIT Symbol Test conditions V(BR)CBO IC=10μA,IE=0 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 B V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 VCB=70V,IE=0 VCB=50V,IE=0 VCB=30V,IE=0 VCE=60V,IB=0 VCE=45V,IB=0 VCE=30V,IB=0 B B B V Collector cut-off current ICBO μA Collector cut-off current ICEO 0.1 μA Emitter cut-off current DC current gain BC846A,847A,848A BC846B,847B,848B BC846C,847C,848C IEBO VEB=5V,IC=0 110 200 420 0.1 220 450 800 0.5 1.1 μA hFE VCE=5V,IC=2mA Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) IC=100mA, IB=5mA B V V IC=100mA, IB=5mA B Transition frequency fT VCE=5V, IC= 10mA 100 f=100MHz MHz Document number: BL/SSSTC043 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN general purpose Transistor Production specification BC846/847/848 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC043 Rev.A www.galaxycn.com 3 BL Galaxy Electrical NPN general purpose Transistor PACKAGE OUTLINE Plastic surface mounted package A E Production specification BC846/847/848 SOT-23 SOT-23 Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J E G H H C J K 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device BC846/847/848 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC043 Rev.A www.galaxycn.com 4
BC847A
1. 物料型号: - BC846A/B、BC847A/B/C、BC848A/B/C,分别用1A/1B、1E/1F/1G、1J/1K/1L表示。

2. 器件简介: - 这些是NPN型通用晶体管,具有高电流增益、无铅、优秀的hFE线性和低噪声特性,适用于音频输入级和驱动应用。

3. 引脚分配: - COLLECTOR EMITTER BASE,即集电极、发射极、基极。

4. 参数特性: - 最大额定值包含集电极-基极电压(BC846为80V,BC847为50V,BC848为30V)、集电极-发射极电压(BC846为65V,BC847为45V,BC848为30V)、发射极-基极电压(BC846为6V,BC847为6V,BC848为5V)。 - 连续集电极电流为0.1A,集电极耗散功率为200mW,结温范围为-65℃至150℃。

5. 功能详解: - 电气特性表详细列出了不同条件下的最小、典型和最大值,如集电极-基极击穿电压、集电极-发射极击穿电压、发射极-基极击穿电压、集电极截止电流、发射极截止电流、直流电流增益hFE、集电极-发射极饱和电压、基极-发射极饱和电压、截止频率等。

6. 应用信息: - 用于通用开关和放大应用。

7. 封装信息: - 使用SOT-23塑料表面贴装封装,详细尺寸和典型值已列出,每卷3000个,采用带盘卷装方式。
BC847A 价格&库存

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