BL1013

P-Channel Enhancement Mode MOSFET BL1013 Features  Low On-Resistance  Low gate threshold voltage  Low input capacitance  Fast switching speed BL1013 BL1013W BL1013T BL1013L  Low input / output leakage SOT-23 SOT-323 SOT-523 DFN1006-3  ESD SD protection up to 2kV (Human body mode) Mechanical Data  BL1013M Case: SOT-23, SOT-323,SOT-523 523, DFN1006-3, SOT-723 SOT-723  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per s MIL-STD-202, Method 208 Ordering Information Part Number P Package Shipping Quantity Marking Code BL1013 SOT-23 3000pcs / Tape & Reel PA1 BL1013W SOT SOT-323 3000pcs / Tape & Reel PA1 BL1013T S SOT-523 3000pcs / Tape & Reel PA1 BL1013L DFN1006 DFN1006-3 10000pcs / Tape & Reel PA1 BL1013M SOT SOT-723 10000pcs / Tape & Reel PA1 25 unless otherwise specified) Maximum Ratings (@ TA = 25℃ Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TA = 25°C) *1 Continuous Drain Current (TA = 70°C) *1 Pulsed Drain Current Symbol Value Unit VDSS -20 V VGSS ±6 V ID *4 MTM0073A: March 2020 IDM www.gmesemi.com -0.78 -0.62 -4.9 A A 1 P-Channel Enhancement Mode MOSFET BL1013 Thermal Characteristics Parameter Power Dissipation (TA = 25°C) *1 Thermal Resistance Junction-to-Air Symbol SOT-23 0.35 SOT-323 0.29 SOT-523 *1 Thermal Resistance Junction-to-Lead Thermal Resistance Junction-to-Case *1 PD 0.15 SOT-723 0.15 SOT-23 357 SOT-323 431 RθJA MTM0073A: March 2020 447 DFN1006-3 834 SOT-723 834 SOT-23 214 SOT-323 258 SOT-523 RθJL 268 DFN1006-3 500 SOT-723 500 SOT-23 180 SOT-323 217 SOT-523 RθJC 225 DFN1006-3 421 SOT-723 421 Operating Junction Temperature Range Storage Temperature Range 0.28 DFN1006-3 SOT-523 *1 Value Unit W °C/W °C/W °C/W TJ -55 ~ +150 °C TSTG -55 ~ +150 °C www.gmesemi.com 2 P-Channel Enhancement Mode MOSFET BL1013 Electrical Characteristics (@ TA = 25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics VDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250μA -20 - - V IDSS Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V - - -1 μA IGSS Gate-Body Leakage Current VGS = ±4.5V, VDS = 0V - - ±10 μA VGS = -4.5V, ID = -780mA - 0.35 0.48 VGS = -2.5V, ID = -660mA - 0.44 0.67 VGS = -1.8V, ID = -100mA - 0.78 2.2 -0.45 - -1.2 On Characteristics RDS(ON) VGS(TH) *2 Static Drain-Source On-resistance Gate Threshold Voltage Dynamic Characteristics VDS = VGS, ID = -250uA Input Capacitance VGS = 0V - 152 - COSS Output Capacitance VDS = -16V - 18.5 - CRSS Reverse Transfer Capacitance f = 1.0MHz - 6 - QG Total Gate-Charge VGS = -4.5V - 2.8 - QGS Gate to Source Charge VDS = -16V - 2.1 - QGD Gate to Drain (Miller) Charge ID = -0.2A - 0.5 - td(ON) Turn-on Delay Time - 51.3 - tr Turn-on Rise Time VDD = -10V - 24.2 - Turn-Off Delay Time ID = -0.2A - 246 - - 81.2 - - -0.8 -1.2 tf V *3 CISS td(OFF) Ω VGS = -5V RG = 10Ω Turn-Off Fall Time pF nC ns Source-Drain Diode Characteristics VSD Diode Forward Voltage *1 IS = -0.35A, VGS = 0 V V Notes: Device mounted on FR-4 PCB Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% Guaranteed by design, not subject to production Pulse width limited by maximum junction temperature 1、 2、 3、 4、 MTM0073A: March 2020 www.gmesemi.com 3 P-Channel Enhancement Mode MOSFET BL1013 Ratings and Characteristics Curves (@ TA = 25C unless otherwise specified) -5 800 VGS = -5,-6,8,-10V VGS = -4V 700 600 VGS = -4.5V RDS(ON) (mΩ) VGS = -3.5V -3 VGS = -3V ID (A) VGS = -1.8V 500 VGS = -2.5V 400 300 VGS = -4.5V VGS = -2V -1 200 0 -1 -2 -3 -4 100 -100 -5 -200 -300 -400 -500 VDS (V) Fig 1 -600 -700 -800 ID (mA) On-Region Characteristics Fig 2 On-Resistance vs. Drain Current and Gate Voltage 800 1.00E+07 ID = -780mA 1.00E+06 700 125°C 1.00E+05 500 150°C 400 300 150°C 1.00E+04 125°C IS (uA) RDS(ON) (mΩ) 600 100°C 25°C 1.00E+03 75°C 100°C 1.00E+02 1.00E+01 75°C 25°C 1.00E+00 200 -1 -2 -3 -4 -5 -6 -7 0 -8 -0.5 -1.5 On-Resistance vs. Gate-Source Voltage Fig 4 800 Body-Diode Characteristics -15 VDS = -5V 700 600 -10 ID (A) ID = -100mA VGS = -1.8V 500 RDS(ON) (mΩ) -2 VSD (V) VGS (V) Fig 3 -1 ID = -660mA VGS = -2.5V 400 -5 150°C ID = -780mA VGS = -4.5V 300 25°C 0 200 100 5 0 25 50 75 100 125 150 -1 -1.5 -2 TJ (°C) Fig 5 On-Resistance vs. Junction Temperature MTM0073A: March 2020 -2.5 -3 -3.5 -4 -4.5 -5 VGS (V) Fig 6 www.gmesemi.com Transfer Characteristics 4 P-Channel Enhancement Mode MOSFET BL1013 -40 200 FREQUENCY = 1MHZ 180 ID = -250uA 160 CISS 140 -30 BVDSS (V) C (PF) 120 100 80 60 -20 COSS 40 20 CRSS 0 0 -5 -10 -15 -20 -10 25 50 VDS (V) Fig.7-Capacitance Characteristics 75 100 TJ (°C) 125 150 Fig.8- Drain-Source vs. Junction Temperature -1 ID = -250uA -0.8 VGSTH (V) -0.6 -0.4 -0.2 0 25 50 75 100 125 150 TJ (°C) Fig.9- Gate Voltage vs. Junction Temperature MTM0073A: March 2020 www.gmesemi.com 5 P-Channel Enhancement Mode MOSFET BL1013 Package Outline Dimensions (Unit: mm) A SOT-23 E K Dimension Min. Max. A 2.70 3.10 B 1.10 1.50 C 0.90 1.10 D 0.30 0.50 E 0.35 0.48 G 1.80 2.00 H 0.02 0.10 J 0.05 0.15 K 2.20 2.60 B J D G H C C SOT-323 E K B A D Min. Max. A 2.00 2.20 B 1.15 1.35 C 0.90 1.10 D 0.15 0.35 E 0.25 0.40 G 1.20 1.40 H 0.02 0.10 J 0.05 0.15 K 2.20 2.40 J H G MTM0073A: March 2020 Dimension www.gmesemi.com 6 P-Channel Enhancement Mode MOSFET BL1013 SOT-523 A F C K Dimension Min. Max. A 1.50 1.70 B 0.75 0.85 C 0.60 0.80 D 0.15 0.30 E 0.30 0.40 F 0.25 0.40 G 0.90 1.10 H 0.02 0.10 J 0.08 0.18 K 1.45 1.75 B E D J G H DFN1006-3 MTM0073A: March 2020 Dimension Min. Typ. Max. A 0.95 1.00 1.075 B 0.47 0.50 0.53 C 0.55 0.60 0.675 D 0.45 0.50 0.55 E/J 0.20 0.25 0.30 F - 0.40 - G - 0.35 - H 0 0.03 0.05 I 0.10 0.15 0.20 www.gmesemi.com 7 P-Channel Enhancement Mode MOSFET BL1013 J SOT-723 K B E D F C A G MTM0073A: March 2020 www.gmesemi.com Dimension Min. Max. A 1.10 1.30 B 0.70 0.90 C 0.40 0.54 D 0.22 0.42 E 0.10 0.30 F 0.12 0.32 G 0.70 0.90 J 0.08 0.15 K 1.10 1.30 8 P-Channel Enhancement Mode MOSFET BL1013 Mounting Pad Layout (Unit: mm) SOT-23 0.95 0.95 2.00 0.90 0.80 SOT-323 0.65 0.65 1.90 0.90 0.70 SOT-523 0.508 0.787 1.803 0.356 1.000 MTM0073A: March 2020 www.gmesemi.com 9 P-Channel Enhancement Mode MOSFET BL1013 DFN1006-3 SOT-723 1.15 0.45 0.50 0.40 0.40 IMPORTANT NOTICE Changzhou Galaxy Century Microelectronics (GME) reserves the right to make changes without further notice to any product information (copyrighted) herein to make corrections, modifications, improvements, or other changes. GME does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. MTM0073A: March 2020 www.gmesemi.com 10