BL817B

Production specification 4 PIN DIP DIODES BL817 Series FEATURES z Current transfer ratio （CTR：50%-600% at IF=5mA,VCE=5V） z High isolation voltage between inputc and output （Viso=5000V rms） z Creepage distance＞7.62mm z Pb free and ROHS compliant z UL/CUL Approved (File No. E340048) Description DIP4L The BL817 series of devices each consist of an infrared Emitting diodes, optically coupled to a phototransistor diodes. They are packaged in a 4-pin DIP package and available in Wide-lead spacing and SMD option. APPLICATIONS z Programmable controllers z System appliances,measuring instruments z Telecommunication equipments z Home appliances,such as fan heaters,etc z Signal transmission between circuits of different potentials And impedances J001 Rev.A www.gmicroelec.com 1 Production specification BL817 Series 4 PIN DIP DIODES MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Rating Unit IF 50 mA IFM 1 A Reverse Voltage VR 6 V Power dissipation P 70 mW Collector-Emitter voltage VCEO 80 V Emitter- Collector voltage VECO 6 V Collector Current Ic 50 mA Collector Power dissipation PC 150 mW Ptot 200 mW Viso 5000 V rms Rated impulse isolation voltage VIOTM 6000 V Rated repetitive peak isolation voltage VIORM 630 V Operating temperature Topr -40~+125 ℃ Storage temperature Tstg -55~+125 ℃ Tsol 260 ℃ Forward current Peak forward Current Input Output (Note 1) Total Power dissipation Isolation voltage Solding temperature J001 Rev.A (Note 2) (Note 3) www.gmicroelec.com 2 Production specification BL817 Series 4 PIN DIP DIODES ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter INPUT OUTPUT TRANSFER CHARACTERISTICS Symbol Condition Forward current VF IF=20mA Peak forward voltage VFM IFM=0.5A Reverse Current IR VR=4V - - 10 uA Terminal capacitance Ct V=0,f=1KHz - 30 250 pF Collector Dark Current ICEO VCE=20V,IF=0 - - 100 nA Collector-Emitter breakdown voltage BVCEO Ic=0.1mA,IF=0 80 - - V Emitter–Collector breakdown voltage BVECO IE=10uA,IF=0 6 - - V Collector Current Ic 2.5 - 30 mA Current Transfer ratio (Note 4) CTR 50 - 600 % Collector-emitter saturation voltage VCE(Sat) - 0.1 0.2 V Isolation resistance Riso 5X1010 1X1011 - Ω Floating capacitance Cf - 0.6 1 pF Cut-off frequency fc - 80 - kHz Rise time Tr - 4 18 us - 3 18 us IF=5mA, VCE=5V IF=20mA IC=1mA DC500V, 40~60%R.H V= 0, f = 1MHz VCE=5V, IC=2 mA, RL=100Ω, -3dB VCE=2V Min. Typ. - 1.2 - - Max. Unit 1.4 V 3.0 V IC=2mA Fall Time Tf RL=100Ω Rank Table of Current Transfer Ratio CTR Rank Mark Min.(%) Max.(%) L 50 100 A 80 160 B 130 260 C 200 400 D 300 600 L or A or B or C or D 50 600 Note 4: Classification table of current transfer ratio is shown below. J001 Rev.A www.gmicroelec.com 3 Production specification 4 PIN DIP DIODES BL817 Series TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified J001 Rev.A www.gmicroelec.com 4 Production specification 4 PIN DIP DIODES BL817 Series PACKAGE OUTLINE Plastic surface mounted package J001 Rev.A SOD-123 www.gmicroelec.com 5 Production specification BL817 Series 4 PIN DIP DIODES Package Dimensions（All Dimensions in mm） BL817 Dim Min Max A 6.40 6.60 B 4.50 4.70 C 7.90 8.30 D 3.28 3.68 E 2° 8° F 1.25 typ. H 2.70 2.90 J 0.23 0.26 K 8.86 9.31 L 0.50 typ. M 2.44 N BL817S J001 Rev.A 2.64 0.40 typ. Dim Min Max A 6.40 6.60 B 4.50 4.70 C 7.90 8.30 D 3.28 3.68 F 1.25 typ. G 0.40 typ. H 0.00 0.20 J 0.9 1.2 K 9.80 10.30 M 2.49 2.69 www.gmicroelec.com 6 Production specification BL817 Series 4 PIN DIP DIODES BL817M Dim Min Max A 6.40 6.60 B 4.50 4.70 C 7.90 8.30 D 3.28 3.68 F 1.25 typ. G 0.40 typ. J 0.23 0.26 K 9.86 10.46 L 0.50 typ. M 2.44 2.64 N 2.4 2.9 Ordering Information Part Number Package Application part number BL817 4-pin DIP BL817S 4-pin（tape and reel packaging） BL817M 4-pin（leads with 0.4” spacing） BL817 SOLDERING FOOTPRINT 2.00 2.60 3.00 10.10 UNIT:mm J001 Rev.A www.gmicroelec.com 7