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BY398Z

BY398Z

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    BY398Z - FAST RECOVERY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
BY398Z 数据手册
BL FEATURES Low cost GALAXY ELECTRICAL BY396(Z)---BY399S(Z) VOLTAGE RANGE: 100--- 1000 V CURRENT: 3.0 A FAST RECOVERY RECTIFIER DO - 27 Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight:0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BY 396 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA =75 BY 397 200 140 200 BY 398 400 280 400 3.0 BY 399 800 560 800 BY 399S 1000 700 1000 UNITS V V V A V RRM V RMS V DC IF(AV) 100 70 100 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 100.0 A Maximum instantaneous forw ard voltage @ 3.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 VF IR t rr CJ RθJA TJ TSTG 1.25 10.0 200.0 150 32 22 - 55---- +150 - 55---- +150 V A ns pF /W Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range N OTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0261023 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES trr 50 N.1. 10 N.1. BY396(Z)---BY399S(Z) FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM +0.5A D.U.T. (+) 50VDC (APPROX) (-) 1 N.1. (-) 0 PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) (+) -0.25A -1.0A 1cm NOTES:1.RISE TIM =7ns M INP IM DANCE=1M .22pF E AX. UT PE 2.RISETIM =10ns M SOURCEIM EDANCE E AX. P =5O SET TIM BASE FOR 50/100 ns /cm E FIG.2 --TYPICAL FORWARD CHARACTERISTIC AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.3 -- FORWARD DERATING CURVE 100 10 4 2 1.0 0.4 0.2 0.1 0.06 0.04 0.02 0.01 0.6 0.8 1.0 1.2 TJ=25 Pulse Width=300 µS 3 2.5 2 Single Phase Half Wave 60H Z Resistive or Inductive Load 1.5 1 0.5 0 25 50 75 100 125 150 175 200 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT TEMPERATURE, FIG.4--TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF 100 60 40 20 10 FIG.5--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES 160 140 120 100 80 60 40 20 0 1 2 4 8 10 20 40 60 80 10 0 TJ =125 8.3ms Single Half Sine-Wave 4 2 1 .1 .2 TJ=25 f=1M z H .4 1.0 2 4 1 0 20 40 1 00 REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60 Hz www.galaxycn.com Document Number 0261023 BLGALAXY ELECTRICAL 2.
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