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BY500-600Z

BY500-600Z

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    BY500-600Z - FAST RECOVERY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
BY500-600Z 数据手册
BL FEATURES Low cost GALAXY ELECTRICAL BY500-100(Z)---BY500-1000(Z) VOLTAGE RANGE: 100 --- 1000 V CURRENT: 5.0 A FAST RECOVERY RECTIFIER DO - 27 Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight:0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BY500 -100 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 BY500 -200 200 140 200 BY500 -400 400 280 400 5.0 BY500 -600 600 420 600 BY500 -800 800 560 800 BY500 -1000 1000 700 1000 UNITS V V V A VRRM VRMS VDC IF(AV) 100 70 100 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 20 0.0 A Maximum instantaneous forw ard voltage @ 5.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=100 VF IR t rr CJ Rθ JA TJ TSTG 1.3 10.0 1000.0 200 55 15 -55---- + 150 - 55---- + 150 V A ns pF /W Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range N OTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.galaxycn.com Document Number 0261038 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES 50 N.1. 10 N.1. BY500-100(Z)- - -BY500-1000(Z) FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr +0.5A (-) D.U.T. (+) 50VDC (APPROX) (-) 1 N.1. PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A -1.0A NOTES:1.RISE TIM =7ns M INP IM DANCE=1M .22pF E AX. UT PE 2.RISE TIM E=10ns M SOURCEIM EDANCE AX. P =5O 1cm SE TIM BASE FOR 50/100 ns /cm TE FIG.2 --FORWARD DERATING CURVE PEAK FORWARD SURGE CURRENT AMPERES FIG.3 --PEAK FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT AMPERES 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 S in g le P h a s e H a lf W a v e 6 0 H R e s is t iv e o r In d u c tiv e L o a d 200 175 150 125 100 75 50 25 0 1 2 4 8 10 20 40 60 80 100 TJ=125 8.3ms Single Half Sine-Wave Z AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60 Hz FIG.4--TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT AMPERES FIG.5-- TYPICAL JUNCTION CAPACITANCE 100 40 20 10 4 200 JUNCTION CAPACITANCE,pF TJ=25 Pulse Width=300uS 100 60 40 20 10 6 4 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 TJ=25 f=1M z H 1 0.4 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0261038 BLGALAXY ELECTRICAL 2.
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