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BYT42J

BYT42J

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    BYT42J - FAST RECOVERY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
BYT42J 数据手册
BL FEATURES L ow cost GALAXY ELECTRICAL BYT42A(Z)---BYT42M(Z) VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.25 A FAST RECOVERY RECTIFIER DO-15 D iffused junction L ow leakage L ow forward voltage drop H igh current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA C ase:JEDEC DO-15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS R atings at 25 a mbient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYT 42A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 BYT 42B 100 70 100 BYT 42D 200 140 200 BYT 42G 400 280 400 1.25 BYT 42J 600 420 600 BYT 42K 800 560 800 BYT 42M 1000 700 1000 UNITS V V V A V RRM V RMS VDC IF(AV) 50 35 50 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 40.0 A Maximum instantaneous forw ard voltage @ 1.25 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 VF IR t rr CJ RθJA TJ TSTG 150 1.4 5.0 100.0 200 18 45 - 55---- +150 - 55---- +150 V A ns pF /W Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range N OTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0261042 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES BYT42A(Z)---BYT42M(Z) FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 50 N.1. 10 N.1. +0.5A D.U.T. (+) 50VDC (APPROX) (-) 1 N.1. (-) 0 -0.25A PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) (+) -1.0A 1cm NOTE S:1.RISETIM =7ns M INP IM E E AX. UT P DANCE =1M .22pF 2.RISETIM =10ns M SOURCEIM E E AX. P DANCE =5O SE TIM BASEFOR 50/100 ns /cm TE FIG.2 --TYPICAL FORWARD CHARACTERISTIC 30 20 TJ=25 Pulse Width=300µS FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Single Phase Half Wave 60Hz Resistive or Inductive Load 1 .4 1 .2 1 .0 0 .4 0 .2 0 .1 0.0 6 0 .0 4 0.0 2 0.0 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 160 180 INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT TEMPERATURE, FIG.4--TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT AMPERES 200 FIG.5--PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 40 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 TJ=25 f=1M Hz 30 20 TJ=125 8.3ms Single Half Sine-Wave 10 0 1 10 100 REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60 Hz www.galaxycn.com Document Number 0261042 BLGALAXY ELECTRICAL 2.
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