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BYT42K

BYT42K

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    BYT42K - FAST RECOVERY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
BYT42K 数据手册
BL FEATURES L ow cost GALAXY ELECTRICAL BYT42A(Z)---BYT42M(Z) VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.25 A FAST RECOVERY RECTIFIER DO-15 D iffused junction L ow leakage L ow forward voltage drop H igh current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA C ase:JEDEC DO-15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS R atings at 25 a mbient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYT 42A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 BYT 42B 100 70 100 BYT 42D 200 140 200 BYT 42G 400 280 400 1.25 BYT 42J 600 420 600 BYT 42K 800 560 800 BYT 42M 1000 700 1000 UNITS V V V A V RRM V RMS VDC IF(AV) 50 35 50 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 40.0 A Maximum instantaneous forw ard voltage @ 1.25 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 VF IR t rr CJ RθJA TJ TSTG 150 1.4 5.0 100.0 200 18 45 - 55---- +150 - 55---- +150 V A ns pF /W Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range N OTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0261042 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES BYT42A(Z)---BYT42M(Z) FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 50 N.1. 10 N.1. +0.5A D.U.T. (+) 50VDC (APPROX) (-) 1 N.1. (-) 0 -0.25A PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) (+) -1.0A 1cm NOTE S:1.RISETIM =7ns M INP IM E E AX. UT P DANCE =1M .22pF 2.RISETIM =10ns M SOURCEIM E E AX. P DANCE =5O SE TIM BASEFOR 50/100 ns /cm TE FIG.2 --TYPICAL FORWARD CHARACTERISTIC 30 20 TJ=25 Pulse Width=300µS FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Single Phase Half Wave 60Hz Resistive or Inductive Load 1 .4 1 .2 1 .0 0 .4 0 .2 0 .1 0.0 6 0 .0 4 0.0 2 0.0 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 160 180 INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT TEMPERATURE, FIG.4--TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT AMPERES 200 FIG.5--PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 40 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 TJ=25 f=1M Hz 30 20 TJ=125 8.3ms Single Half Sine-Wave 10 0 1 10 100 REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60 Hz www.galaxycn.com Document Number 0261042 BLGALAXY ELECTRICAL 2.
BYT42K
1. 物料型号: - 型号为BYT42A(Z)至BYT42M(Z),覆盖电压范围50至1000V,电流为1.25A。

2. 器件简介: - 快速回复整流器,特点包括低成本、扩散结、低漏电、低正向电压降、高电流能力,可使用氟利昂、酒精、丙酮等溶剂容易清洁。塑料材料符合UL 94V-0认证。

3. 引脚分配: - 根据JEDEC DO-15标准,采用轴向引脚,可焊接,符合MIL-STD-202标准方法208。极性由色带表示阴极。

4. 参数特性: - 最高重复峰值反向电压(VRRM)从50V至1000V不等;最大RMS电压(VRMS)从35V至700V不等;最大直流阻断电压(VDc)与VRRM相同;最大平均正向整流电流(IF(AV))为1.25A;峰值正向浪涌电流(IFSM)为40.0A;最大瞬时正向电压(VF)为1.4V;在额定直流阻断电压下的最大反向电流(IR)为5.0A至100.0A不等;最大反向恢复时间(tr)为150ns至200ns;典型结电容(CJ)为18pF;典型热阻(RBJA)为45°C/W;工作结温范围(TJ)为-55°C至+150°C。

5. 功能详解: - 该器件为快速回复整流器,适用于单相半波60Hz的电阻性或感性负载,对于电容性负载需降额20%。文档中还包含了反向恢复时间特性和测试电路图、典型正向特性曲线、典型结电容特性和正向降额曲线等图表。

6. 应用信息: - 适用于需要快速回复整流的场合,如电源、电机驱动等。

7. 封装信息: - 封装为JEDEC DO-15,塑料外壳。
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