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BYT52GZ

BYT52GZ

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    BYT52GZ - FAST RECOVERY RECTIFIERS - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
BYT52GZ 数据手册
BL F EATURES GALAXY ELECTRICAL BYT52A(Z)---BYT52M(Z) VOLT AGE RANGE: 50 --- 1000 V CURRENT: 1.4 A FAST RECOVERY RECT IFIERS L ow cos t D iffus ed junction L ow leakage L ow forward voltage drop H igh current capability E as ily cleaned with Freon, Alcohol,Is opropanol and s im ilar s olvents D O - 15 MECHANICAL DATA C as e:JEDEC DO--15,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 P olarity: Color band denotes cathode W eight: 0.014 ounces ,0.39 gram s Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 a m bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%. BYT 52A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 BYT 52B 100 70 10 BYT 52D 200 140 200 BYT 52G 400 280 400 1.4 BYT 52J 600 420 600 BYT 52K 800 560 800 BYT 52M 1000 700 1000 UNITS V V V A VRR M V R MS VDC IF(AV) 50 35 50 Peak f orw ard surge current 10ms single half -sine-w ave superimposed on rated load @TJ =125 IFSM VF IR t rr CJ RqJA TJ TSTG 50.0 A Maximum instantaneous f orw ard volta ge ( @ 1.0A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 1.3 5.0 100.0 200 18 45 -55 ---- + 150 -55 ---- + 150 V A ns pF /W Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range N OTE:1. Meas ured with I F =0.5A, I R=1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C . 3. Therm al resistance f rom junction to am bient. www.galaxycn.com Document Number 0261043 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES 50 N.1. 10 N.1. trr BYT52A(Z)---BYT52M(Z) FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM +0.5A D.U.T. (+) 50VDC (APPROX) (-) 1 N.1. (-) 0 PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) (+) -0.25A -1.0A NOTE S:1.R TIM =7ns M IN UT IM E ISE E AX. P P DANCE =1M .22pF 2.RISETIM =10ns M SOURCEIM E E AX. P DANCE =5O SE TIM BASEFOR 50/100 ns /cm TE 1cm FIG.2 --FORWARD DERATING CURVE PEAK FORWARD SURGE CURRENT AMPERES FIG.3 --PEAK FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT AMPERES 90 2.0 1.5 1.0 0.5 0.1 0.05 0.001 0 20 40 60 80 Single Phase Half W 60HZ ave Resistive or Inductive Load 70 50 TJ =125 8.3ms Single Half Sine-Wave 30 10 100 120 180 0 1 10 100 AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60 Hz FIG.4--TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT AMPERES FIG.5--TYPICAL JUNCTION CAPACITANCE 100 10 TJ =25 Pulse Width=300 µS JUNCTION CAPACITANCE,pF 100 60 40 4 2 1.0 0 .4 0 .2 0 .1 0.0 6 0 .0 4 0.0 2 0.0 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 20 10 4 2 1 .1 .2 TJ=25 f=1MHz .4 1.0 2 4 10 20 40 100 INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS www.galaxycn.com 2. Document Number 0261043 BLGALAXY ELECTRICAL
BYT52GZ
1. 物料型号: - BYT52A(Z)至BYT52M(Z),电压范围从50V至1000V,电流为1.4A。

2. 器件简介: - 低成本扩散结二极管,低漏电,低正向电压降,高电流容量,可使用氟利昂、酒精、异丙醇等溶剂轻松清洁。

3. 引脚分配: - 采用JEDEC DO-15标准,塑封外壳,轴向引脚,可按MIL-STD-202方法208焊接,色带表示阴极,任意位置安装。

4. 参数特性: - 最大重复峰值反向电压(VRRM)从50V至1000V不等。 - 最大RMS电压(VRMS)从35V至700V不等。 - 最大直流阻断电压(VDc)从50V至1000V不等。 - 最大平均整流电流(IF(AV))为1.4A。 - 峰值正向浪涌电流(IFSM)为50.0A。 - 最大瞬时正向电压(VF)在1.0A时为1.3V。 - 最大反向电流(IR)在25°C和100°C时分别为5.0uA和100.0uA。 - 最大反向恢复时间(trr)为200ns。 - 典型结电容(CJ)为18pF。 - 典型热阻(RaJA)为45°C/W。

5. 功能详解: - 器件为快速恢复整流器,适用于电阻性或感性负载,电容性负载需降额20%。

6. 应用信息: - 适用于需要快速恢复时间和低正向压降的应用场合。

7. 封装信息: - 封装为DO-15塑封,尺寸为0.034英寸(0.9毫米)。
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