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BYT52MZ

BYT52MZ

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    BYT52MZ - FAST RECOVERY RECTIFIERS - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
BYT52MZ 数据手册
BL F EATURES GALAXY ELECTRICAL BYT52A(Z)---BYT52M(Z) VOLT AGE RANGE: 50 --- 1000 V CURRENT: 1.4 A FAST RECOVERY RECT IFIERS L ow cos t D iffus ed junction L ow leakage L ow forward voltage drop H igh current capability E as ily cleaned with Freon, Alcohol,Is opropanol and s im ilar s olvents D O - 15 MECHANICAL DATA C as e:JEDEC DO--15,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 P olarity: Color band denotes cathode W eight: 0.014 ounces ,0.39 gram s Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 a m bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%. BYT 52A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 BYT 52B 100 70 10 BYT 52D 200 140 200 BYT 52G 400 280 400 1.4 BYT 52J 600 420 600 BYT 52K 800 560 800 BYT 52M 1000 700 1000 UNITS V V V A VRR M V R MS VDC IF(AV) 50 35 50 Peak f orw ard surge current 10ms single half -sine-w ave superimposed on rated load @TJ =125 IFSM VF IR t rr CJ RqJA TJ TSTG 50.0 A Maximum instantaneous f orw ard volta ge ( @ 1.0A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 1.3 5.0 100.0 200 18 45 -55 ---- + 150 -55 ---- + 150 V A ns pF /W Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range N OTE:1. Meas ured with I F =0.5A, I R=1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C . 3. Therm al resistance f rom junction to am bient. www.galaxycn.com Document Number 0261043 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES 50 N.1. 10 N.1. trr BYT52A(Z)---BYT52M(Z) FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM +0.5A D.U.T. (+) 50VDC (APPROX) (-) 1 N.1. (-) 0 PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) (+) -0.25A -1.0A NOTE S:1.R TIM =7ns M IN UT IM E ISE E AX. P P DANCE =1M .22pF 2.RISETIM =10ns M SOURCEIM E E AX. P DANCE =5O SE TIM BASEFOR 50/100 ns /cm TE 1cm FIG.2 --FORWARD DERATING CURVE PEAK FORWARD SURGE CURRENT AMPERES FIG.3 --PEAK FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT AMPERES 90 2.0 1.5 1.0 0.5 0.1 0.05 0.001 0 20 40 60 80 Single Phase Half W 60HZ ave Resistive or Inductive Load 70 50 TJ =125 8.3ms Single Half Sine-Wave 30 10 100 120 180 0 1 10 100 AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60 Hz FIG.4--TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT AMPERES FIG.5--TYPICAL JUNCTION CAPACITANCE 100 10 TJ =25 Pulse Width=300 µS JUNCTION CAPACITANCE,pF 100 60 40 4 2 1.0 0 .4 0 .2 0 .1 0.0 6 0 .0 4 0.0 2 0.0 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 20 10 4 2 1 .1 .2 TJ=25 f=1MHz .4 1.0 2 4 10 20 40 100 INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS www.galaxycn.com 2. Document Number 0261043 BLGALAXY ELECTRICAL
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