BYT56G

BL GALAXY ELECTRICAL HIGH EFFICIENCY ECTIFIERS FEATURES Fast recovery times Ul 90V0 flame retardant epoxy molding compound Diffused junction Low cost High surge current capability Bevel round chip, aualanche operation BYT56A(Z)--- BYT56M(Z) VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A DO - 27 MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYT 56A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 BYT 56B 100 70 100 BYT 56D 200 140 200 BYT 56G 400 280 400 3.0 BYT 56J 600 420 600 BYT 56K 800 560 800 BYT 56M 1000 700 1000 UNITS V V V A VRRM VRMS VDC IF(AV) 50 35 50 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ=125 IFSM 150.0 A Maximum instantaneous forw ard voltage @ 3.0A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) VF IR trr CJ RθJA TJ TSTG 75 1.4 10.0 150.0 100 50 30 - 55 ---- + 150 - 55 ---- + 150 V A ns pF ／Ｗ Operating junction temperature range Storage temperature range NOTE: 1. Measured with IF=0.5A, IR=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0262025 BL GALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES BYT56A(Z)--- BYT56M(Z) FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC t rr +0.5A (+) PULSE GENERATOR (NOTE2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (-) 50 N 1. 10 N 1. D.U.T. (+) 25VDC (approx) (-) 0 -0.25A -1.0A 1 cm NOTES:1.RISETIM E=7ns M AX.INPUT IM PEDANCE Ω.22pF =1M 2.RISETIM E=10ns M AX.source IM PEDANCE=50Ω. SET TIM BASEFOR 20/30 ns/cm E FIG.2 -- TYPICAL JUNCTION CAPACTTANCE 200 FIG.3 --PEAK FORWARD SURGE CURRENT PEAKFORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF B YT56J - BY T56M 100 70 50 200 TJ=25 8 .3 m s S in gle h alf sine w a ve 150 BYT56A - BYT56G 10 TJ=25 100 50 1 .1 .2 .4 1 .0 2 10 4 20 40 100 0 1 10 100 1000 REVERSE VOLTAGE,VOLTS FIG.4 -- TYPICAL FORWARD CURRENT DERATING CURVE NUMBER OF CYCLES AT 60Hz FIG.5--TYPICAL FORWARD CHARACTERISTIC 100 6 5 4 3 2 S ig le p h a s e h a lf w ave 60 H z R e s is tiv e o r In d u c tiv e lo a d INSTANTANEOUS FORWARD CURRENT AMPERES AVERAGE FORWARD CURRENT. AMPERES 10 TJ=25 Pulse Width=300 s 1 0.1 0.01 0 0.4 0.6 1.2 1.4 25 50 75 100 125 150 175 1.6 1.8 AMBIENT TEMPERATURE( ) INSTANTANEOUS FORWARD VOLTAGE,VOLTS Document Number 026025 BL GALAXY ELECTRICAL www.galaxycn.com 2.