BL GALAXY ELECTRICAL
HIGH EFFICIENCY ECTIFIERS
FEATURES
Fast recovery times Ul 90V0 flame retardant epoxy molding compound Diffused junction Low cost High surge current capability Bevel round chip, aualanche operation
BYT56A(Z)--- BYT56M(Z)
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A
DO - 27
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYT 56A
Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75
BYT 56B
100 70 100
BYT 56D
200 140 200
BYT 56G
400 280 400 3.0
BYT 56J
600 420 600
BYT 56K
800 560 800
BYT 56M
1000 700 1000
UNITS
V V V A
VRRM VRMS VDC IF(AV)
50 35 50
Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ=125
IFSM
150.0
A
Maximum instantaneous forw ard voltage @ 3.0A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3)
VF IR trr CJ RθJA TJ TSTG
75
1.4 10.0 150.0 100 50 30 - 55 ---- + 150 - 55 ---- + 150
V A ns pF /W
Operating junction temperature range Storage temperature range
NOTE: 1. Measured with IF=0.5A, IR=1A, I rr=0.25A.
www.galaxycn.com
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient.
Document Number 0262025
BL GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
BYT56A(Z)--- BYT56M(Z)
FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
t rr
+0.5A
(+) PULSE GENERATOR (NOTE2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (-)
50 N 1.
10 N 1.
D.U.T. (+) 25VDC (approx) (-)
0 -0.25A
-1.0A
1 cm
NOTES:1.RISETIM E=7ns M AX.INPUT IM PEDANCE Ω.22pF =1M 2.RISETIM E=10ns M AX.source IM PEDANCE=50Ω.
SET TIM BASEFOR 20/30 ns/cm E
FIG.2 -- TYPICAL JUNCTION CAPACTTANCE
200
FIG.3 --PEAK FORWARD SURGE CURRENT PEAKFORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
B YT56J - BY T56M
100 70 50
200
TJ=25 8 .3 m s S in gle h alf sine w a ve
150
BYT56A - BYT56G
10
TJ=25
100
50
1
.1
.2
.4
1 .0
2
10 4
20
40
100
0
1
10
100
1000
REVERSE VOLTAGE,VOLTS FIG.4 -- TYPICAL FORWARD CURRENT DERATING CURVE
NUMBER OF CYCLES AT 60Hz FIG.5--TYPICAL FORWARD CHARACTERISTIC
100
6 5 4 3 2 S ig le p h a s e h a lf w ave 60 H z R e s is tiv e o r In d u c tiv e lo a d
INSTANTANEOUS FORWARD CURRENT AMPERES
AVERAGE FORWARD CURRENT. AMPERES
10
TJ=25 Pulse Width=300 s
1
0.1
0.01
0
0.4
0.6
1.2
1.4
25
50
75
100
125
150 175
1.6 1.8
AMBIENT TEMPERATURE( )
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
Document Number 026025
BL GALAXY ELECTRICAL
www.galaxycn.com
2.
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