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BZW04P5V8

BZW04P5V8

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    BZW04P5V8 - TRANSIENT VOLTAGE SUPPRESSOR - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
BZW04P5V8 数据手册
BL FEATURES GALAXY ELECTRICAL BZW04P-5V8 --- BZW04-376 BREAKDOWN VOLTAGE: 5.8 --- 376 V PEAK PULSE POWER: 400 W TRANSIENT VOLTAGE SUPPRESSOR Plastic package has u nderwriters l aboratory flam mability c lassification 94V-0 Glass passivated junction 4 00W peak pulse power capability with a 10/1000 μs waveform, repetition rate (duty cycle): 0.01% Excellent clam ping capability Fast response tim e: typically less than 1.0ps from 0 Volts to V(BR) for uni-directional and 5.0ns for bi-directional types D evices with V(BR) 10V ID a re typically ID l ess than 1.0 μA H igh temperature soldering guaranteed:265 / 10 seconds, 0.375"(9.5mm) lead length, 5l bs. (2.3kg) tension DO-41 MECHANICAL DATA C ase:JEDEC DO--41, molded plastic body over passivated junction Term inals: axial leads, solderable per MIL-STD-750, m ethod 2026 Polarity: foruni-directional types the color band denotes the cathode, which is postitive with respect to the anode under normal TVS operation Weight: 0.012 ounces, 0.34 gram s Mounting position: any DEVICES FOR BIDIRECTIONAL APPLICATIONS For bi-directional use add suffix letter "B" (e.g. BZW04P-6V4B). Electrical characteristics apply in both directions. MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 a mbient tem perature unless otherwise specified. SYMBOL Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE 1, FIG.1) Peak pulse current w ith a 10/1000μs w aveform (NOTE 1) Steady state pow er dissipation at TL=75 fffffLead lengths 0.375"(9.5mm) (NOTE 2) Peak forw ard surge current, 8.3ms single half ffffSine- wave superimposed on rated load (JEDEC Method) (NOTE 3) Maximum instantaneous forw ard v oltage at 25A for unidirectional only (NOTE 4) Operating junction and storage temperature range VALUE Minimum 400 See table 1 1.0 40.0 3.5/6.5 -50---+175 UNIT W A W A V PPPM IPPM PM(AV) IFSM VF TJ, TSTG NOTES: ( 1) Non-repetitive current pules, per Fig. 3 and derated above TA=25 per Fig. 2 ( 2) Mounted on copper pad area of 1.6" x 1.6"( 40 x40mm2) per Fig. 5 ( 3) Measured of 8.3ms single half sine-w ave or equare w ave, duty c y cle=4 pulses per minute maximum ( 4) V F=3.5 Volt max. for devices of V (BR) 220V, and V F=5.0 Volt max. for devices of V (BR) >220V www.galaxycn.com Document Number 0285007 BLGALAXY ELECTRICAL 1. ELECTRICAL CHARACTERISTICS a t(T A=25 Device type Unidirectional BZW04P5V 8 BZW04-5V 8 BZW04P6V 4 BZW04-6V 4 BZW04P7V 0 BZW04-7V 0 BZW04P7V 8 BZW04-7V 8 BZW04P8V 5 BZW04-8V 5 BZW04P9V 4 BZW04-9V 4 BZW04P10 BZW04-10 BZW04P11 BZW04-11 BZW04P13 BZW04-13 BZW04P14 BZW04-14 BZW04P15 BZW04-15 BZW04P17 BZW04-17 BZW04P19 BZW04-19 BZW04P20 BZW04-20 BZW04P23 BZW04-23 BZW04P26 BZW04-26 BZW04P28 BZW04-28 BZW04P31 BZW04-31 BZW04P33 BZW04-33 BZW04P37 BZW04-37 BZW04P40 BZW04-40 BZW04P44 BZW04-44 BZW04P48 BZW04-48 Bidirectional BZW04P5V 8B BZW04-5V 8B BZW04P6V 4B BZW04-6V 4B BZW04P7V 0B BZW04-7V 0B BZW04P7V 8B BZW04-7V 8B BZW04P8V 5B BZW04-8V 5B BZW04P9V 4B BZW04-9V 4B BZW04P10B BZW04-10B BZW04P11B BZW04-11B BZW04P13B BZW04-13B BZW04P14B BZW04-14B BZW04P15B BZW04-15B BZW04P17B BZW04-17B BZW04P19B BZW04-19B BZW04P20B BZW04-20B BZW04P23B BZW04-23B BZW04P26B BZW04-26B BZW04P28B BZW04-28B BZW04P31B BZW04-31B BZW04P33B BZW04-33B BZW04P37B BZW04-37B BZW04P40B BZW04-40B BZW04P44B BZW04-44B BZW04P48B BZW04-48B Breakdow n v oltage V (BR) (V ) (NOTE1) Min 6.45 6.45 7.13 7.13 7.79 7.79 8.65 8.65 9.50 9.50 10.5 10.5 11.4 11.4 12.4 12.4 14.3 14.3 15.2 15.2 17.1 17.1 19.0 19.0 20.9 20.9 22.8 22.8 25.7 25.7 28.5 28.5 31.4 31.4 34.2 34.2 37.1 37.1 40.9 40.9 44.7 44.7 48.5 48.5 53.2 53.2 Ma x 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 56.1 53.6 61.6 58.8 u nless othe rw ise noted) Test current at IT (mA ) 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Stand-of f reverse v oltage l eakge VWM at V WM (V ) ID (NOTE3)( μ A ) 5.80 5.80 6.40 6.40 7.02 7.02 7.78 7.78 8.55 8.55 9.40 9.40 10.2 10.2 11.1 11.1 12.8 12.8 13.6 13.6 15.3 15.3 17.1 17.1 18.8 18.8 20.5 20.5 23.1 23.1 25.6 25.6 28.2 28.2 30.8 30.8 33.3 33.3 3 6.8 36.8 40.2 40.2 43.6 43.6 47.8 47.8 1000 1000 500 500 200 200 50 50 10 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum pea k pulse IPPM (NOTE2) (A ) 38.0 38.0 35.4 35.4 33.0 33.0 30.0 30.0 27.6 27.6 25.7 25.7 24.0 24.0 22.0 22.0 19.0 19.0 17.8 17.8 16.0 16.0 14.5 14.5 13.0 13.0 12.0 12.0 10.7 10.7 9.6 9.6 8.8 8.8 8.0 8.0 7.4 7.4 6.7 6.7 6.2 6.2 5.7 5.7 5.2 5.2 Maximum clamping v oltage at IPPM V C (V ) 10.5 10.5 11.3 11.3 12.1 12.1 13.4 13.4 14.5 14.5 15.6 15.6 16.7 16.7 18.2 18.2 21.2 21.2 22.5 22.5 25.2 25.2 27.7 27.7 30.6 30.6 33.2 33.2 37.5 37.5 41.5 41.5 45.7 45.7 49.9 49.9 53.9 53.9 59.3 59.3 64.8 64.8 70.1 70.1 77.0 77.0 T ABLE 1 Maximum temperature coef f icient of V (BR) (%/ ) 0.057 0.057 0.061 0.061 0.065 0.065 0.068 0.073 0.070 0.075 0.075 0.075 0.078 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 0.102 0.102 0.103 0.103 www.galaxycn.com Document Number 0285007 BLGALAXY ELECTRICAL 2. ELECTRICAL CHARACTERISTICS a t(T A=25 Device type Unidirectional BZW04P53 BZW04-53 BZW04P58 BZW04-58 BZW04P64 BZW04-64 BZW04P70 BZW04-70 BZW04P78 BZW04-78 BZW04P85 BZW04-85 BZW04P94 BZW04-94 BZW04P102 BZW04-102 BZW04P110 BZW04-110 BZW04P128 BZW04-128 BZW04P136 BZW04-136 BZW04P145 BZW04-145 BZW04P154 BZW04-154 BZW04P171 BZW04-171 BZW04P188 BZW04-188 BZW04P213 BZW04-213 BZW04P239 BZW04-239 BZW04P256 BZW04-256 BZW04P273 BZW04-273 BZW04P299 BZW04-299 BZW04P342 BZW04-342 BZW04P376 BZW04-376 Bidirectional BZW04P53B BZW04-53B BZW04P58B BZW04-58B BZW04P64B BZW04-64B BZW04P70B BZW04-70B BZW04P78B BZW04-78B BZW04P85B BZW04-85B BZW04P94B BZW04-94B BZW04P102B BZW04-102B BZW04P110B BZW04-110B BZW04P128B BZW04-128B BZW04P136B BZW04-136B BZW04P145B BZW04-145B BZW04P154B BZW04-154B BZW04P171B BZW04-171B BZW04P188B BZW04-188B BZW04P213B BZW04-213B BZW04P239B BZW04-239B BZW04P256B BZW04-256B BZW04P273B BZW04-273B BZW04P299B BZW04-299B BZW04P342B BZW04-342B BZW04P376B BZW04-376B 50ms. Breakdow n v oltage V (BR) (V ) (NOTE1) Min 58.9 58.9 64.6 64.6 71.3 71.3 77.9 77.9 86.5 86.5 95.0 95.0 105.0 105 114 114 124 124 143 143 152 152 161 161 171 171 190 190 209 209 237 237 266 266 285 285 304 304 332 332 380 380 418 418 Ma x 68.2 65.1 74.8 71.4 82.5 78.8 90.2 86.1 100 95.5 110 105 121 116 132 126 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 308 294 330 315 352 336 385 368 440 420 484 462 unle ss otherw ise note d) Test current at IT (mA ) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Stand-of f reverse v oltage leakge V WM at V WM (V ) ID (NOTE3)( μ A ) 53.0 53.0 58.1 58.1 64.1 64.1 70.1 70.1 78.0 78.0 85.5 85.5 94.0 94.0 102.0 102 111 111 128 128 136 136 145 145 154 154 171 171 188 188 213 213 239 239 256 256 273 273 299 299 342 342 376 376 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum peak pulse IPPM(NOTE2) (A ) 4.7 4.7 4.3 4.3 3.9 3.9 3.5 3.5 3.2 3.2 2.9 2.9 2.6 2.6 2.4 2.4 2.2 2.2 2.0 2.0 1.8 1.8 1.7 1.7 1.6 1.6 1.5 1.5 1.4 1.4 1.5 1.5 1.5 1.5 1.20 1.20 1.20 1.20 0.90 0.90 0.90 0.90 0.80 0.80 T ABLE 1(Cont' d) Maximum clamping v oltage at IPPM V C (V ) 85.0 85.0 92.0 92.0 103 103 113 113 125 125 137 137 152 152 165 165 179 179 207 207 219 219 234 234 246 246 274 274 301 301 344 344 384 384 414 414 438 438 482 482 548 548 603 603 Maximum temperature coef ficient of V (BR) (%/ ) 0.104 0.104 0.104 0.104 0.105 0.105 0.105 0.105 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 NOTE: (1) Pulse test: tp www.galaxycn.com (2) Surge current w avef orm per Fig. 3 and derated Fig. 2 (3) For bidirectional types having V WM of 10 volts and less, the ID limit is doubled (4) All terms and symbols are consistent w ith A NSI/IEEE C62.35 Document Number 0285007 BLGALAXY ELECTRICAL 3. RATINGS AND CHARACTERISTIC CURVES PEAK PULSE POWER (P PP) OR CURRENT BZW04P-5V8 --- BZW04-376 FIG.1 -- PEAK PULSE POWER RATING CURVE PPPM, PEAK PULSE POWER, KW 100 NON-REPETITIVE PULSE WAVEFORM SHOWN if FIG.3 TA=25 10 FIG.2 -- PULSE DERATING CURVE DERATING IN PERCENTAGE, % 100 75 50 1.0 25 0.1 0.1μ s 1.0μ s 10μ s 100μ s 0.1ms 10ms 0 0 25 50 75 100 125 150 175 200 (I PPM) tol, PULSE WIDTH, SEC. FIG.3 -- PULSE WAVEFORM 150 TA, AM BIENT TEM PERATURE. IPPM, PEAK PULSE CURRENT, % tr=10¦ Μ sec PEAK VALUE IPPM PULES WIDTH (td) is DEFINDE as the POINT WHERE the PEAK CURRENT DECAYS to 50% of IPPM FIG.4 -- TYPICAL JUNCTION CAPACITANCE H HHHHHHHH HUNIDIRECTIONAL 100.000 100 HALF VALUE - IPPM 2 50 CJ, JUNCTION CAPACITANCE, Pf sec. 10/1000¦ Μ WAVEFORM as DEFINDE by R.E.A. T J=25 f=1.0MH Z Vsig=50mVp-p 10.000 td 0 MEASURED at ZEROBIAS 0 1.0 2.0 3.0 4.0 t, TIM , m Es PM(AV), STRADY STATE POWER 1000 FIG.5 -- STEADY STATE POWER DERATING CURVE 1.00 L=0.375"(9.5mm) LEAD LENGTHS 60 HZ RESISTIVEOR INDUCTIVE LOAD MEASURED at STAND-OFF VOLTAGE, V WM 10 1.0 10 100 200 DISSIPATION, W 0.75 0.50 0.25 1.6 x 1.6 x .040" (40 x 40 x 1mm.) COPPER HEAT SINKS V(BR), BREAKDOWN VOLTAGE, V 0 0 25 50 75 100 125 150 175 200 TL, LEAD TEMPERATURE, ID, INSTANTANEOUS REVERSE IFSM, PEAK FORWARD SURGE FIG.7 -- TYPICAL REVERSE LEAKAGE JJJJJJJJJJJJJJJJJJCHARACTERISTICS LEAKAGE CURRENT, mA 100 M EASURED ATDEVICES STAND-OFF VOLTAGE, V WM FIG.6 -- MAXIMUN NON-REPETITIVE FORWARD HHHH H CURRENT UNIDIRECTIONAL ONLY SURGE CURRENT, A 50 T J =T J m ax. 8.3ms SINGLE HALF SINE-MAVE (JEDEC METHOD) 10 40 30 1 T A=25 ℃ 20 0.1 10 0.01 0 100 200 300 400 500 0 1 10 100 V(BR), BREAKDOWN VOLTAGE, V NUMBER OF CYCLES AT 60 Hz www.galaxycn.com Document Number 0285007 BLGALAXY ELECTRICAL 4.
BZW04P5V8
### 物料型号 - BZW04P-5V8 --- BZW04-376

### 器件简介 BL GALAXY ELECTRICAL TRANSIENT VOLTAGE SUPPRESSOR(瞬态电压抑制器)是一种用于保护电子电路免受电压瞬态影响的器件。它们具备以下特点: - 塑料封装,UL94V-0阻燃等级 - 玻璃钝化结 - 400W峰值脉冲功率能力,10/1000μs波形,重复率(占空比):0.01% - 极佳的钳位能力 - 快速响应时间:从0伏特到V(BR)的单向类型典型小于1.0ns,双向类型为5.0ns - 设备V(BR)>10V时,典型小于1.0A

### 引脚分配 - JEDEC DO-41封装,模塑塑料体覆盖钝化结引脚,轴向引线,可按MIL-STD-750方法2026进行订购

### 参数特性 - 最大额定值和特性: - 25℃环境温度下,除非另有说明 - 峰值功率耗散:至少400W,10/1000μs波形 - 峰值脉冲电流:见表1 - 稳态功率耗散:1.0W - 峰值正向浪涌电流:40.0A - 最大瞬时正向电压:3.5/6.5V(单向/双向)

- 电气特性: - 在25℃环境温度下,除非另有说明 - 包括击穿电压、测试电流、待机电压、最大反向漏电流、最大峰值脉冲电流、最大钳位电压和最大温度系数等参数

### 功能详解 该器件主要用于保护电子电路免受静电放电(ESD)、电快速瞬变(EFT)和浪涌等瞬态电压的影响。它们能够在纳秒级响应并吸收高能量脉冲,保护后级电路。

### 应用信息 适用于双向应用的设备,通过添加后缀“B”(例如BZW04P-6V4B)来标识。电气特性在两个方向上都适用。

### 封装信息 - JEDEC DO-41封装,模塑塑料体覆盖钝化结引脚,轴向引线
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