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BZW06-6V4

BZW06-6V4

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    BZW06-6V4 - TRANSIENT VOLTAGE SUPPRESSOR - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
BZW06-6V4 数据手册
BL FEATURES GALAXY ELECTRICAL BZW06 --- SERIES BREAKDOWN VOLTAGE: 5.8 --- 376 V PEAK PULSE POWER: 600 W TRANSIENT VOLTAGE SUPPRESSOR ◇ Plastic package h as Underwriters Laboratory Flammability Classification 94V-0 ◇ Glass passivated junction ◇ 6 00W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability ◇ ◇ Fast response time: typically less than 1.0ps from 0 Volts to V(BR) for uni-directional and 5.0ns for bi-directional types ◇ D evices with V(BR) ≥10V ID are typically ID less than 1.0 µA ◇ H igh temperature soldering guaranteed:265 ℃/ 10 seconds, 0.375"(9.5mm) lead length, 5Ibs. (2.3kg) tension DO - 15 MECHANICAL DATA ◇ C ase:JEDEC DO--15, molded plastic body ove r passivated junction ◇ Terminals: Axial leads, solderable per MIL-STD-750, method 2026 ◇ Polarity: Foruni-directional types the color band denotes the cathode, which is postitive with respect to the anode under normal TVS operation ◇ Weight: 0.014 ounces, 0.39 grams ◇ Mounting position: Any DEVICES FOR BIDIRECTIONAL APPLICATIONS For bi-directional use add suffix letter "B" (e.g. BZW06P-6V4B). Electrical characteristics apply in both directions. MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 ℃ ambient temperature unless otherwise specified. SYMBOL Peak pow er sissipation w ith a 10/1000µs w aveform (NOTE 1, FIG.1) Peak pulse current w ith a 10/1000µs w aveform (NOTE 1) Steady state pow er dissipation at TL=75℃ fffffLead lengths 0.375"(9.5mm) (NOTE 2) Peak forw ard surge current, 8.3ms single half ffffSine-w ave superimposed on rated load (JEDEC Method) Thermal resistance junction to lead junction to ambient lead = 10mm Operating junction and storage temperature range VALUE Minimum 600 SEE TABLE 1 3.0 100.0 60 100 -55---+175 UNIT W A W A PPPM IPPM PM(AV) IFSM R θJL R θJA TJ, TSTG ℃/W ℃ NOTES: ( 1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2 Rating is 500W betw een 40V and 188V types. For a sur ge greater than the maximum values, the diode w ill short circuit. ( 2) Mounted on copper pad area of 1.6 x 1.6” ( 40 x 40mm) per Fig. 5 www.galaxycn.com Document Number 0285008 BLGALAXY ELECTRICAL 1. ELECTRICAL CHARACTERISTICS at(TA=25℃ unless otherwise noted) Device Type ID @ V MW (max) µA 1000 500 10 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 V 5.80 6.40 8.50 10.2 12.8 15.3 18.8 20.5 23.1 25.6 28.2 30.8 33.3 40.2 47.8 58.1 70.1 85.5 102 128 154 171 188 213 256 273 299 342 376 V (BR) @ IT (min) (1) V 6.45 7.13 9.50 11.4 14.3 17.1 20.9 22.8 25.7 28.5 31.4 34.2 37.1 44.7 53.2 64.6 77.9 95.0 114 143 171 190 209 237 285 304 332 380 418 mA TABLE 1(Cont' d) V C @ IPP (max) 8/20µs V A 298 276 215 184 147 123 102 93.0 83.0 75.0 68.0 62.0 57.0 48.0 40.0 33.0 27.0 22.5 19.0 15.0 12.6 11.3 10.3 9.0 7.6 7.1 6.5 5.7 5.7 Max. Typical Temp. Capacitance Coefficient C(3) of V (BR)(2) %/C 0.057 0.061 0.073 0.078 0.084 0.088 0.092 0.094 0.096 0.097 0.098 0.099 0.100 0.101 0.103 0.104 0.105 0.106 0.107 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.100 pF 4000 3700 2800 2300 1900 1600 1350 1250 1150 1075 1000 950 900 800 700 625 550 500 450 400 360 350 330 310 290 280 270 360 350 V C @ IPP (max) 10/1000µs V A Unidirectional BZW06-5V8 BZW06-6V4 BZW06-8V5 BZW06-10 BZW06-13 BZW06-15 BZW06-19 BZW06-20 BZW06-23 BZW06-26 BZW06-28 BZW06-31 BZW06-33 BZW06-40 BZW06-48 BZW06-58 BZW06-70 BZW06-85 BZW06-102 BZW06-128 BZW06-154 BZW06-171 BZW06-188 BZW06-213 BZW06-256 BZW06-273 BZW06-299 BZW06-342 BZW06-376 Bidirectional BZW06-5V8B BZW06-6V4B BZW06-8V5B BZW06-10B BZW06-13B BZW06-15B BZW06-19B BZW06-20B BZW06-23B BZW06-26B BZW06-28B BZW06-31B BZW06-33B BZW06-40B BZW06-48B BZW06-58B BZW06-70B BZW06-85B BZW06-102B BZW06-128B BZW06-154B BZW06-171B BZW06-188B BZW06-213B BZW06-256B BZW06-273B BZW06-299B BZW06-342B BZW06-376B 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 10.5 11.3 14.5 16.7 21.2 25.2 30.6 33.2 37.5 41.5 45.7 49.9 53.9 64.8 77.0 92.0 113 137 165 207 246 274 328 344 414 438 482 548 603 57.0 53.0 41.0 36.0 28.0 24.0 19.6 18.0 16.0 14.5 13.1 12.0 11.1 9.3 6.5 5.4 4.4 3.6 3.0 2.4 2.0 1.8 1.5 1.7 1.4 1.4 1.2 1.1 1.0 13.4 14.5 18.6 21.7 27.2 32.5 39.3 42.8 48.3 53.5 59.0 64.3 69.7 84.0 100 121 146 178 212 265 317 353 388 442 529 564 618 706 776 NOTE: (1) Pulse test: tp≤50ms. (2) V(BR) = αT* (TA - 25) *V (BR) (25°C) (3) V R = 0 V , f = 1 MHZ. For Bidirectional types, capacitance value is divided by 2 www.galaxycn.com Document Number 0285008 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- PEAK PULSE POWER RATING CURVE PEAK PULSE POWER PP) OR CURRENT (P DERATING IN PERCENTAGE, % 100 BZW06 --- SERIES FIG.2 -- PULSE DERATING CURVE PPPM, PEAK PULSE POWER, KW 100 NON-REPETITIVE PULSE WAVEFORM SHOWN if FIG.3 TA=25℃ 10 75 50 1.0 25 0 0.1 0.1µs 0 25 50 75 100 125 150 175 200 1.0µs 10µs 100µs 0.1ms 10ms tol, PULSE WIDTH, SEC. TA, AMBIENT TEMPERATURE. ℃ FIG.3 -- PULSE WAVEFORM FIG.4 -- TYPICAL JUNCTION CAPACITANCE H HHHHHHHH HUNIDIRECTIONAL CJ, JUNCTION CAPACITANCE, pF IPPM, PEAK PULSE CURRENT, % 150 tr=10¦ Μ sec PEAK VALUE IPPM PULES WIDTH (td) is DEFINDE as the POINT WHERE the PEAK CURRENT DECAYS to 50% of IPPM (I PPM) 50 TJ=TJ max. 8.3ms SINGLE HALF SINE-MAVE (JEDEC METHOD) 100 HALF VALUE - IPPM 2 40 30 50 10/1000¦ Μ sec. WAVEFORM as DEFINDE by R.E.A. 20 10 td 0 0 1 10 100 0 1.0 2.0 3.0 4.0 t, TIME, ms V(BR), BREAKDOWN VOLTAGE, V FIG.5 -- STEADY STATE POWER DERATING CURVE FIG.6 -- MAXIMUN NON-REPETITIVE FORWARD HHHH HSURGE CURRENT UNIDIRECTIONAL ONLY IFSM, PEAK FORWARD SURGE 10,000 Unidirectional Bidirectional PM(AV), STRADY STATE POWER 4 L=0.375"(9.5mm) LEAD LENGTHS 3 DISSIPATION, W CURRENT, A 60 HZ RESISTIVEOR INDUCTIVE LOAD 1,000 VR=0 2 1 1.6 x 1.6 x .040" (40 x 40 x 1mm.) COPPER HEAT SINKS 100 0 0 25 50 75 100 125 150 175 200 VR=RATED STAND-OFF VOLTAGE 10 5 100 500 T L, LEAD TEMPERATURE, ℃     NUMBER OF CYCLES AT 60 Hz www.galaxycn.com Document Number 0285008 BLGALAXY ELECTRICAL 3.
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