EDB103S

BL GALAXY ELECTRICAL SILICON BRIDGE RECTIFIERS FEATURES R ating to 400 V PRV Surge overload rating to 30 Amperes peak Ideal for printed circuit board R eliable low cost construction utilizing molded L ead solderable per MIL-STD-202 method 208 L ead: silver plated copper, solderde plated Plastic material has UL flammability classification 94V-O Polarity symbols molded on body Weight: 1.0 grams EDB101S --- EDB106S VOLTAGE RANGE: 50 --- 400 V CURRENT: 1.0 A DB-S .310(7.90) .290(7.40) .255(6.5) .245(6.2) .042(1.1) .038(1.0) .327(8.3) .315(8.0) .130(3.30) .120(3.04) .205(5.2) .195(5.0) .013(.330) .003(.076) .410(10.4) .360(9.4) .009 (.23) .060(1.524) .040(1.016) inch(mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS R atings at 25 a mbient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EDB 101S Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard Output current @TA =55 EDB 102S 100 70 100 EDB 103S 150 105 150 1.0 EDB 104S 200 140 200 EDB 105S 300 210 300 EDB 106S 400 280 400 UNITS V V V A VRRM VRMS VDC IF(AV) 50 35 50 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =100 (NOTE 2) IFSM 30.0 A VF IR trr CJ TJ TSTG 15 1.0 10.0 1.0 50 10 - 55 ---- + 150 - 5 5 ---- + 150 V μA mA nS pF Maximum reverse recovery time (NOTE 1) Typical junction calacitance Operating junction temperature range Storage temperature range NOTE: 1. Test conditions: I F =0.5A, I R=-1.0A, I RR=-0.25A. 2. Measured at 1 MH z and applied rev erse v olt age of 4. 0 v olt s. www.galaxycn.com Document Number 0287008 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC EDB101S --- EDB106S FIG.2 -- TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT, AMPERSE 2 Single phaes half wave 60Hz resistive or inductive load 50 N 1. 10 N 1. +0.5A trr D.U.T. (+) 25VDC (approx) (-) PULSE GENERATOR (NOTE2) 0 -0.25A 1 1 NONINDUCTIVE OSCILLOSCOPE (NOTE1) -1.0A 1cm 0 0 25 50 75 100 125 150 NOTES:1.RISE TIME =7ns MAX. INPUT IMPEDANCE=1MΩ.22pF 2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5OΩ SET TIME BASE FOR 10 ns /cm AMBIENT TEMPERATURE ( ) FIG.3 -- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, 100 INSTANTANEOUS FORWARD CURRENT, AMPERSE FIG.4 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 TJ=150 10 1 .0 AMPERSE TJ=100 1.0 0 .1 0.1 TJ=25 .0 1 TJ=125 P u lse W id th =300u S .01 0 20 40 60 80 100 120 140 .0 0 1 0 0 .2 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG.5 -- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.6 -- TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT, 60 200 JUNCTION CAPACITANCE, (pF) TJ=25 100 60 40 20 10 6 4 2 1 .1 1 4 10 100 50 40 8.3ms Single Half Sine Wave TJ=25 EDB101S-EDB104S AMPERSE 30 20 EDB105S-EDB106S 10 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE, VOLTS www.galaxycn.com Document Number 0287008 BLGALAXY ELECTRICAL 2.