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EM1B

EM1B

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    EM1B - PLASTIC SILICON RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
EM1B 数据手册
BL GALAXY ELECTRICAL PLASTIC SILICON RECTIFIER FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 EM1Y(Z)---EM1C(Z) VOLTAGE RANGE: 100 --- 1000 V CURRENT: 1.0 A DO - 41 MECHANICAL DATA Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EM1Y V RRM V RMS V DC IF(AV) 100 70 100 EM1Z 200 140 200 EM1 400 280 400 1.0 EM1A 600 420 600 EM1B 800 560 800 EM1C 1000 700 1000 UNITS V V V A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 45.0 A Maximum instantaneous forw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage Typical junction capacitance Typical thermal resistance @TA =25 @TA=100 (Note1) (Note2) VF IR CJ RθJA TJ TSTG 0.97 5.0 50.0 15 50 - 55---- +150 - 55---- + 150 V A pF /W Operating junction temperature range Storage temperature range 2. Thermal resistance f rom junction to ambient. NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. www.galaxycn.com Document Number 0260019 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- FORWARD DERATING CURVE EM1Y(Z) --- EM1C(Z) FIG.2 -- TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT, AMPERES 100 FORWARD CURRENT, AMPERES 1.0 10 TJ=25 Pulse W idth=300uS 4 2 1.0 0.4 0.2 0.1 0.06 0.04 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.8 0.6 0.4 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.2 0 0 25 50 75 100 125 1 50 AMBIENT TEMPERATURE, FORWARD VOLTAGE,VOLTS FIG.3 -- PEAK FORWARD SURGE CURRENT FIG.5--TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT AMPERES 100 45 40 35 30 25 20 15 10 5 1 2 4 8 10 20 40 60 80 100 TJ=125 8.3ms Single Half Sine-Wave JUNCTION CAPACITANCE,Pf 60 40 20 10 4 TJ=25 f=1MHz 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0260019 BLGALAXY ELECTRICAL 2.

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