EM513

EM513

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    EM513 - PLASTIC SILICON RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
EM513 数据手册
BL GALAXY ELECTRICAL PLASTIC SILICON RECTIFIER FEATURES Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed: 250 /10sec/0.375" (9.5mm) lead length at 5 lbs tension EM513 --- EM518 VOLTAGE RANGE: 1600 --- 2000 V CURRENT: 1.0 A DO - 41 MECHANICAL DATA Case:JEDEC DO -41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EM513 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA =75 EM516 1800 1260 1800 1.0 EM518 2000 1400 2000 UNITS V V V A V RRM V RMS V DC IF(AV) 1600 1120 1600 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 30.0 A Maximum instantaneous forw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage Typical junction capacitance Typical thermal resistance @TA=25 @TA=100 (Note1) (Note2) VF IR CJ RθJA TJ TSTG 1.1 5.0 50.0 10 50 - 55 ---- + 150 - 55 ---- + 150 V A pF /W Operating junction temperature range Storage temperature range NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 2. Thermal resistance f rom junction to ambient at 0.375"(9.5mm) lead length, P.C.board mounted www.galaxycn.com Document Number 0260033 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT 1.0 EM513 --- EM518 FIG.2 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, AMPERES 20 10 4 0.8 AMPERES 0.6 1 .4 0.4 0.2 0 Single Phase Half Wave 60Hz Resistive or Inductive Load .1 .04      T J =25 Pulse Width=300 μ s 0 25 50 75 100 125 150 175 .01 .6 .8 1.0 1.2 1.4 1.5 AMBIENT TEMPERATURE, INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.3 -- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.4 -- TYPICAL REVERSE CHARACTERISTICS CURRENT, AMPERES 45 8.3ms Single Half Sine-Wave (JEDEC Method) INSTANTANEOUS REVERSE CURRENT, MICRO AMPERES PEAK FORWARD SURGE 10 4 TJ=100℃ 1 .4 .1 .04 .01 0 20 40 60 80 100 120 140 TJ=25℃ 40 30 20 10 0 1 4 10 40 100 NUMBER OF CYCLES AT 60Hz PERCENT OF RATED PEAK REVERSE VOLTAGE, % FIG.5 -- TYPICAL JUNCTION CAPACITANCE 200 JUNCTION CAPACITANCE, pF 100 40 10 TJ=25℃ 4 1 .1 .4 1 4 10 40 100 REVERSE VOLTAGE, VOLTS www.galaxycn.com Document Number 0260033 BLGALAXY ELECTRICAL 2.
EM513
1. 物料型号: - EM513 - EM516 - EM518

2. 器件简介: - 这些是塑料封装的硅整流器,具有自动插入功能,适用于高电流应用,低漏电流,高浪涌能力,并且保证在250℃下10秒内焊接0.375英寸(9.5mm)的引脚长度,承受5磅的张力。

3. 引脚分配: - 轴向引脚,可焊接,符合MIL-STD-202, Method 208标准。 - 极性:色带表示阴极。

4. 参数特性: - 最大重复峰值反向电压(VRRM):EM513为1600V,EM516为1800V,EM518为2000V。 - 最大RMS电压(VRMS):EM513为1120V,EM516为1260V,EM518为1400V。 - 最大直流阻断电压(VDc):EM513为1600V,EM516为1800V,EM518为2000V。 - 最大平均整流电流(IF(AV)):1.0A。 - 峰值正向浪涌电流(IFSM):30.0A。 - 最大瞬时正向电压(VF):1.1V。 - 最大反向电流(IR):5.0uA(EM513)和50.0uA(EM518)。 - 典型结电容(CJ):10pF。 - 典型热阻(ReJA):50°C/W。 - 工作结温范围(TJ):-55°C至+150°C。 - 存储温度范围(TSTG):-55°C至+150°C。

5. 功能详解: - 这些器件适用于单相半波60Hz的电阻性或感性负载。对于电容性负载,需要降低20%的额定值。

6. 应用信息: - 适用于需要高电流能力和高浪涌能力的整流应用。

7. 封装信息: - JEDEC DO-41标准,模塑塑料封装。 - 重量:0.012盎司,0.34克。 - 安装位置:任意位置。
EM513 价格&库存

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