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ERB35

ERB35

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    ERB35 - HIGH EFFICIENCY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
ERB35 数据手册
BL FEATURES GALAXY ELECTRICAL ERB35 -- 02 VOLTAGE RANGE: 200 V CURRENT: 1.0 A HIGH EFFICIENCY RECTIFIER Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 DO - 15 MECHANICAL DATA Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERB35 - 02 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA =75 UNITS V V V A V RRM V RMS VDC IF(AV) 200 140 200 1.0 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 30.0 A Maximum instantaneous forw ard voltage @ 1.0A Maximum reverse current @TA =25 VF IR trr CJ RθJA TJ TSTG 1.1 5.0 100.0 100 20 60 - 55 ---- + 150 - 55 ---- + 150 V A ns pF /W at rated DC blocking voltage @TA =100 Maximum reverse recovery time Typical junction capacitance Typical thermal resistance (Note1) (Note2) (Note3) Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0262028 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr ERB35-- 02 50 N 1. 10 N 1. +0.5A D.U.T. (+) 25VDC (approx) (-) (+) PULSE GENERATOR (NOTE2) 0 -0.25A 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (-) -1.0A 1cm NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF 2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50Ω. SET TIME BASE FOR 20/30 ns/cm FIG.2 --FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT. FIG.3--TYPICAL JUNCTION CAPACITANCE 1.4 1.2 1.0 0.8 JUNCTION CAPACITANCE,pF 100 60 40 20 10 AMPERES 0.6 0.4 0.2 0 Single Phase Half Wave 60hz Resistive or Inductive Load 4 2 1 .1 TJ=25 f=1MHz .2 .4 1.0 2 4 10 20 40 100 0 20 40 60 80 100 120 140 150 AMBIENT TEMPERATURE. REVERSE VOLTAGE,VOLTS 100 50 TJ=25 8 . 3 m s S in g le H a lf S in e - W a v e INSTANTANEOUS FORWARD CURRENT FIG.4--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. FIG.5 -- TYPICAL FORWARD CHARACTERISTIC 100 10 30 AMPERES T J =25 Pulse W idth=300 µ S AMPERES 1.0 10 5 3 0.1 0.04 0.01 0 10 20 30 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 .8 2 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE VOLTS BLGALAXY ELECTRICAL Document Number 0262028 www.galaxycn.com 2.
ERB35 价格&库存

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