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ERC25-06

ERC25-06

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    ERC25-06 - FAST RECOVERY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
ERC25-06 数据手册
BL F EATURES G ALAXY ELECTRICAL E RC25-04---ERC25-06 VOLT AGE RANGE: 400 --- 600 V CURRENT : 1.2 A FAST RECOVERY RECT IFIER L ow cos t D iffus ed junction L ow leakage L ow forward voltage drop H igh current capability E as ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents The plas tic m aterial carries U/L recognition 9 4V -0 D O - 15 MECHANICAL DATA C as e:JEDEC DO-15,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 P olarity: Color band denotes cathode W eight: 0.014 ounces ,0.39 gram s Mounting pos ition: Any MAXIMUM RATINGS AND ELECT RICAL CHARACTERIST ICS R atings at 25 a m bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. ERC25 - 04 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 ERC25 - 06 600 420 600 1.2 UNITS V V V A VRRM V R MS VDC IF (AV) 400 280 400 Peak f orw ard surge current 8.3ms s ingle half -sine-w ave superimposed on rated load @TJ =125 IF SM 50.0 A Maximum instantaneous f orw ard voltage @ 1.2 A Maximum revers e current a t rated DC blocking v oltage @TA =25 @TA =100 VF IR t rr CJ Rθ JA TJ TSTG 1.1 5.0 100.0 400 18 45 -55----+150 -55----+150 V A ns pF /W Maximum revers e recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range N OTE:1. Measured with IF =0.5A, IR =1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C . 3. Therm al resistance f rom junction to am bient. www.galaxycn.com Document Number 0261059 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES 50 N.1. 10 N.1. trr ERC25-04---ERC25-06 FIG.1 -- REVERSE RECOVERY TINE CHARACTERISTIC AND TEST CIRCUIT DIAGRAM +0.5A D.U.T. (+) 50VDC (APPROX) (-) 1 N.1. (-) 0 PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) (+) -0.25A -1.0A 1cm N S:1.R TIM =7ns M IN U IM E AN E OTE ISE E AX. P T P D C =1M .22pF 2.R TIM =10ns M SOU C IM E AN E ISE E AX. R E P D C =5O SE TIM BASEFOR50/100 ns /cm TE FIG.2 --TYPICAL FORWARD CHARACTERISTIC AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.3 -- FORWARD DERATING CURVE 10 2.0 TJ=25 Pulse Width=300uS 1 .4 1 .2 1 .0 0 .8 0 .6 0 .4 0 .2 0 1.4 1.2 1.0 S ingle P hase H alf W a v e 6 0H z R es is tive o r In du ctiv e L oad 0.1 0.04 0 20 40 60 80 100 120 140 0 0.6 0.7 0.9 1.1 1.3 1.5 1.7 1.9 INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT TEMPERATURE, FIG.4--TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT AMPERES FIG.5--PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 100 60 40 20 10 80 70 60 50 40 30 20 10 0 1 2 4 8 10 20 40 60 80 10 0 TJ =125 8.3ms Single Half Sine-Wave 4 2 1 .1 TJ=25 f=1MHz .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60 Hz www.galaxycn.com Document Number 0261059 BLGALAXY ELECTRICAL 2.
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