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ES1F

ES1F

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    ES1F - FAST RECOVERY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
ES1F 数据手册
BL FEATURES L ow cost GALAXY ELECTRICAL ES1F---ES1A VOLTAGE RANGE: 1500 --- 600 V CURRENT: 0.7 A FAST RECOVERY RECTIFIER DO - 41 D iffused junction L ow leakage L ow forward voltage drop H igh current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA C ase:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 a mbient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ES1F Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 ES1Z 200 140 200 ES1 400 280 400 0.7 ES1A 600 420 600 UNITS V V V A VRRM VRMS V DC IF(AV) 1500 1050 1500 0.5 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 20.0 30.0 A Maximum instantaneous forw ard voltage @ 0.5/0.7A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=100 VF IR t rr CJ RθJA TJ TSTG 2.0 10.0 100.0 350 15 50 -55----+150 -55---- +150 2.5 5.0 V A ns pF /W Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range N OTE:1. Measured with I F=0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0261063 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 50 N.1. 10 N.1. ES1F---ES1A +0.5A D.U.T. (+) 50VDC (APPROX) (-) 1 N.1. (-) 0 PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) (+) -0.25A -1.0A N S: 1. R TIM = 7ns M IN U IM E AN E= 1M . 22P OTE ISE E AX. P T P D C F 2. R TIM = 10ns M SOU C IM E AN E= 50 ISE E AX. R E PD C SE TIM BASEFOR50/100 ns /cm TE 1cm FIG.2 -- FORWARD DERATING CURVE INSTANTANEOUS FORWARD CURRENT AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.3 -- TYPICAL FORWARD CHARACTERISTIC 100 10 4 2 1.0 0.4 0.2 0.1 0.06 0.04 0.02 0.01 1.0 2.0 3.0 4.0 5.0 ES1F~ ES1Z T J =25 Pulse Width=300 µ S 1.0 ES1Z ES1 ES1A 0.8 0.6 ES1F 0.4 Single Phase Half Wave 60Hz Resistive or Inductive Load ES1~ ES1A 0.2 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, INSTANTANEOUS FORWARD CURRENT, VOLTS FIG.4-- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES FIG.5-- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF 30 100 60 40 20 E S1 Z E S1 E S1 A 20 10 10 E S1 F 4 2 1 .1 TJ=25 f=1MHz 01 5 10 50 .2 .4 1.0 2 4 10 20 40 100 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0261063 BLGALAXY ELECTRICAL 2.

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