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ES3GB

ES3GB

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    ES3GB - SURFACE MOUNT RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
ES3GB 数据手册
BL GALAXY ELECTRICAL ES3AB--- ES3GB VOLTAGE RANGE: 50 --- 400 V CURRENT: 3.0 A SURFACE MOUNT RECTIFIER FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-214AA,molded plastic Terminals: Solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode W eight: 0.007 ounces,0.21 grams Mounting position: Any DO-214AA(SMB) inch(mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25  ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ES3AB Device marking code Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current @TA=100 Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @TJ=125 ES3BB EB 100 70 100 ES3CB EC 150 105 150 3.0 ES3DB ES3GB ED 200 140 200 UNITS V V V A EA VRRM VRMS VDC IF(AV) 50 35 50 EG 400 210 400 IFSM VF IR trr CJ R θJA TJ TSTG 100 A V A 35 ns pF /W Maximum instantaneous forward voltage at3.0 A Maximum reverse current at rated DC blocking voltage Typical reverse recovery time Typical junction capacitance Typical thermal resistance Operating junction temperature range Storage temperature range NOTE: 1. Measured with IF=0.5A, IR=1A, Irr =0.25A. 0.90 10 500 25 45 40 - 55 ---- + 150 - 55 ---- + 150 1.25 @TA=25 @TA=125 (Note1) (Note2) www.galaxycn.com 2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas Document Number 0280030 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES ES3AB --- ES3GB FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. 0 (+) 25VDC (approx) (-) 1 NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) -0.25A -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 20/30 ns/cm INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC AVERAGE FORWARD CURRENT AMPERES FIG.3 -- FORWARD DERATING CURVE z 100 10 3 AMPERES 3.0 1.0 1.5 0.1      TJ=25 Pulse width=300 s 1% Duty Cycle Single Phase Half Wave 60HZ Resistive or Inductive Load 0 0 25 50 75 100 125 150 175 0.01 0 0.4 0.8 1.0 1.8 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4      TJ=25 FIG.5 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 100 80 60 8.3ms Single Half Sine-Wave AMPERES 40 20 0 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 1 5 10 50 100 REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60Hz www.galaxycn.com Document Number 0280030 BLGALAXY ELECTRICAL 2.
ES3GB 价格&库存

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ES3GB
  •  国内价格
  • 1+0.2085
  • 100+0.1946
  • 300+0.1807
  • 500+0.1668
  • 2000+0.15985
  • 5000+0.15568

库存:2580

ES3GB
  •  国内价格
  • 1+0.15001
  • 100+0.14001
  • 300+0.13001
  • 500+0.12001
  • 2000+0.11501
  • 5000+0.11201

库存:8515

ES3GBF
  •  国内价格
  • 1+0.16201
  • 100+0.15121
  • 300+0.14041
  • 500+0.12961
  • 2000+0.12421
  • 5000+0.12097

库存:0