GL34J

GL34J

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    GL34J - SURFACE MOUNT RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
GL34J 数据手册
BL GALAXY ELECTRICAL SURFACE MOUNT RECTIFIER FEATURES Plastic package has underwriters laboratory 111 flammability classifications For surface mounted applications Low profile package Built-in strain relief,ideal for automated placement Glass passivated chip junction High temperature soldering: 111 250oC/10 seconds at terminals GL34A- - - GL34M REVERSE VOLTAGE: 50 - 1000 V CURRENT: 1.0 A DO - 213AA SOLDERABLE ENDS 1st BAND 2nd BAND D2 D1= 0.066 0.060 (1.676) (1.524) MECHANICAL DATA Case:JEDEC DO-213AA,molded plastic over 1111passivated chip Terminals:Solder Plated, solderable per MIL-STD1111750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.0014 ounces, 0.036 gram 0.022(0.559) 0.016(0.406) 0.145(3.683) 0.131(3.327) 0.022(0.559) 0.016(0.406) D2=D1 0 0.008(0.20) inch(mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified GL34A GL34B GL34D GL34G GL34J GL34K GL34M UNITS Polarity color bands (2nd Band) Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ord rectified current V @TL=75 Peak forw ard surge current V 8.3ms single half-sine-w ave superimposed V on rated load (JEDEC Method) Maximum instantaneous forw ard voltage at 0.5 A Maximum DC reverse current at rated DC blockjing voltage @TA=25oC @TA=125oC Gray VRRM VRWS VDC IF(AV) IFSM VF IR CJ t rr Red 100 70 100 Orange Yellow Green 200 140 200 400 280 400 0.5 10.0 1.2 5.0 600 420 600 Blue 800 560 800 Violet 1000 700 1000 V V V A A 50 35 50 1.3 V A 50.0 4.0 1.5 Typical junction capacitance(NOTE 2) pF S o Typical reverse recovery time(NOTE3) Typical thermal resitance (NOTE 4) Operating junction temperature range Storage temperature range R JA TJ TSTG 150 -55--------+150 -55--------+150 C/W o C NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0volts 2.Thermal resistance form junction to ambient and junction to lead P.C.B mounted on 0.27"X0.27"(7.0X7.0mm2) copper pad areas 3.Measured with IF=0.5A,IR=1.0A,Irr=0.25A. www.galaxycn.com 4. Thermal resistance from junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas Document Number 0280055 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- FORWARD DERATING CURVE 1.2 GL34A- - -GL34M FIG.2 PEAK FORWARD SURGE CURRENT 100 PEAK FORWARD SURGE CURRENT,AMPERES AVERAGE FORWARD CURRENT,AMPERES 1.0 0.8 0.6 Resistive or inductive Load 40 30 T L =110 C 8.3m s Single Half Sine (JE DE C M ethod) O W ave S 1(A-J) 10 S 1(K,M) 0.4 0.2 0 0.2X0.2(5.0X5.0mm) THICK COPPERPAND AREAS 0 2 0 4 0 60 80 100 120 140 160 1 1 10 100 AMBIENT TEMPERATURE NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT MICROAMPERES 100 FIG.4 -- TYPICAL REVERSE CHARACTERISTICS 100 10 TJ=125 C O 10 TJ=25 C 1 O 1 TJ=75 C O 0.1 0.1 Puise Width=300 1%DUTY CYCLE S 0.01 TJ=25OC 0.01 0.4 0.6 0.8 1.0. 1.2 1.4 1.6 1.8 2.0 0.001 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, FIG.5-TYPICAL JUNCTION CAPACITANCE 100 100 FIG.6-TRANSIENT THERMAL IMPEDANCE JUNCTION CAPACITANCE pF 60 TRANSIENT THERMAL IMPEDANCE, /W 40 20 10 f=1MHz TJ=25 10 S1(K,M) 1 S1(A-J) 4 2 1 .1 .2 0.1 0.01 0.1 1 UNITS MOUNTED on 0.20x0.20''(5.0X5.0mm)X0.5mil INCHES(0.013mm) THICK COPPERLAND AREAS .4 1.0 2 4 10 20 40 100 10 100 REVERSE VOLTAGE,VOLTS PULSE DURATON,SEC www.galaxycn.com Document Number 0280055 BLGALAXY ELECTRICAL 2.
GL34J
1. 物料型号: - 型号包括GL34A、GL34B、GL34D、GL34G、GL34J、GL34K和GL34M。

2. 器件简介: - 这是一个表面安装整流器,具有低轮廓封装,适合自动化放置,玻璃钝化芯片结,可承受高温焊接。

3. 引脚分配: - 根据JEDEC DO-213AA标准,封装为塑料包覆钝化芯片,引脚为镀锡,可焊性符合ML-TD750,方法2026,极性通过色带表示阴极端。

4. 参数特性: - 最大重复峰值反向电压(VRRM)从50V到1000V不等,最大RMS电压(VRMS)从35V到700V不等,最大直流阻断电压(VDC)从50V到1000V不等。 - 最大平均整流电流(IF(AV))在75°C时为1.0A,峰值正向浪涌电流(IFSM)为10.0A,最大瞬时正向电压(VF)在0.5A时为1.2V到1.3V不等,最大直流反向电流(IR)在25°C时为5.0μA到50.0μA不等。 - 典型结电容(CJ)为4.0pF,典型反向恢复时间(trr)为1.5μs,典型热阻(RBJA)为150°C/W。

5. 功能详解: - 器件为表面安装应用设计,具有低轮廓封装,内置瞬时释放,适合自动化放置,玻璃钝化芯片结,可承受高温焊接。

6. 应用信息: - 适用于需要整流功能的表面安装应用。

7. 封装信息: - 封装类型为DO-213AA,塑料包覆钝化芯片,引脚镀锡,可焊性符合ML-TD750,方法2026。
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