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GZF24C

GZF24C

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    GZF24C - ZENER DIODES - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
GZF24C 数据手册
BL GALAXY ELECTRICAL VZ : GZF3V6C---GZF91C 3.6 -- 91 V 800 mW POWER DISSIPATION: ZENER DIODES FEATURES ◇ Silicon planar power zener diodes. ◇ Low leakage current ◇ Low profile surface mount package. ◇ High temperature soldering: 260℃/10 sec.at terminals. SOD-123FL Cathode Band Top View 1.8 0.1 1.0 0.2 5° 2.8 0.1 0.05 0.30 0.98 0.1 MECHANICAL DATA 5 0.60 0.25 ◇ Case:JEDEC SOD-123FL,molded plastic ◇ Terminals: Solderable per MILSTD-202,Method 208 ◇ Polarity: Color band denotes cathods end ◇ Weight: 0.006 ounces, 0.02 grams ◇ Mounting position: any 3.7 0.2 Maximum Ratings and Thermal Characteristics Parameter Power dissipation at TA=25℃ (Note 1) Forward voltage @IF=200mA Maximum thermal resistance junction to ambient Junction temperature Storage temperature range 1) (TA=25℃ unless otherwise noted) Symbol Ptot VF RθJA TJ TSTG Value 800 1.2 180 -55 to +150 -55 to +150 Unit mW V K/W ℃ ℃ www.galaxycn.com Mounted on epoxy glass PCB with 3×3mm,Cu pads(≥40µm thick) Document Number 0284036 BLGALAXY ELECTRICAL 1. ELECTRICAL CHARACTERISTICS Zener Voltage Range(1) VZ@IZT V Min GZF3V6C GZF3V9C GZF4V3C GZF4V7C GZF5V1C GZF5V6C GZF6V2C GZF6V8C GZF7V5C GZF8V2C GZF9V1C GZF10C GZF11C GZF12C GZF13C GZF15C GZF16C GZF18C GZF20C GZF22C GZF24C GZF27C GZF30C GZF33C GZF36C GZF39C GZF43C GZF47C GZF51C GZF56C GZF62C GZF68C GZF75C GZF82C GZF91C 1)Pulse test:tp ≤5ms W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WK WL WM WN WO WP WR WS WT WU WW WX WY WZ X1 X2 X3 X4 X5 X6 X7 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 Type Device Marking Code Test Current IZT mA Differential Resistance rdif@IZT Ω Typ Max 8.0 8.0 7.0 7.0 6.0 4.0 3.0 3.0 2.0 2.0 4.0 4.0 7.0 7.0 10 10 15 15 15 15 15 15 15 15 40 40 45 45 60 60 80 80 100 100 200 Temperature Coeffizient αVZ@IZ %/℃ Min -0.14 -0.14 -0.12 -0.1 -0.08 -0.04 -0.01 0 0 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 Maximum Reverse Leakage Current IR µA Max 100 50 25 10 5.0 10 5.0 10 50 10 10 7.0 4.0 3.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.0 3.0 5.0 7.5 8.2 9 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 VR V Max 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 87 96 100 100 100 100 100 100 100 100 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5.0 Max -0.04 -0.04 -0.02 0 0.2 0.04 0.06 0.07 0.07 0.08 0.08 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 4.0 4.0 4.0 3.0 3.0 2.0 2.0 1.0 1.0 1.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 6.0 6.0 6.0 7.0 7.0 8.0 8.0 21 21 24 24 25 25 25 25 30 30 60 www.galaxycn.com Document Number 0284036 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TYPICAL FORWARD CHARACTERISTIC GZF3V6C - - - GZF91C 10 mA 3 10 2 10 IF 1 10 10 -1 TJ = 100 °C TJ = 25 °C -2 10 -3 10 10 -4 -5 0 0.2 0.4 0.6 VF 0.8 1V FIG.2 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE mW 800 P tot 600 400 200 0 100 Tamb 200 °C www.galaxycn.com Document Number 0284036 BLGALAXY ELECTRICAL 3.
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