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HER103

HER103

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    HER103 - HIGH EFFICIENCY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
HER103 数据手册
BL GALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode W eight: 0.012 ounces,0.34 grams Mounting position: Any HER101--- HER108 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A DO - 41 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS R atings at 25  ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. HER 101 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA =75 HER HER HER HER HER HER HER UNITS 102 103 104 105 106 107 108 100 70 100 200 140 200 300 210 300 1.0 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V A V RRM V RMS V DC IF(AV) 50 35 50 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 30.0 A Maximum instantaneous forw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage Typical reverse recovery time Typical junction capacitance Typical thermal resistance @TA =25 @TA =100 (Note1) (Note2) (Note3) VF IR t rr CJ RθJA TJ TSTG 1.0 1.3 5.0 100.0 50 20 60 - 55 ---- + 150 - 55 ---- + 150 1.7 V A 70 15 ns pF /W Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient. Document Number 0262002 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES HER101 --- HER108 FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. 0 (+) 25VDC (approx) (-) 1 NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) -0.25A -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 20/30 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT 100 10 FIG.3 -- FORWARD DERATING CURVE z 3 0 0 \4 0 0 V AVERAGE FORWARD CURRENT 1.0 0.8 0.6 TJ=25 P u ls e W id t h = 3 0 0 µ S 1.0 AMPERES AMPERES 0.4 0.2 0 0 5 0 \1 0 0 \ 2 0 0 V 6 0 0 \8 0 0 \1 0 0 0 V 0.1 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375''(9.5mm)Lead Length 0.01 25 50 75 100 125 150 175 0 0 .2 0 .4 0 .6 0 .8 1 1 .2 1.4 1.6 1.8 2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS A MBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT 200 100 FIG.5 -- PEAK FORWARD SURGE CURRENT 50 40 30 JUNCTION CAPACITANCE,pF 60 40 HER101-HER105 8.3ms Single Half Sine-Wave 20 10 6 4      TJ=25 HER107-HER108 AMPERES 20 10 0 1 2 1 0.1 0.2 0.4 1 2 5 10 50 100 4 10 20 40 100 REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60Hz www.galaxycn.com Document Number 0262002 BLGALAXY ELECTRICAL 2.
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