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KTC3265

KTC3265

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    KTC3265 - NPN Silicon Epitaxial Planar Transistor - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
KTC3265 数据手册
BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES High DC current gain: hFE:100-320 Low saturation voltage. Suitable for driver stage of small motor. Complementary to KTC1298. Small package. Production specification KTC3265 Pb Lead-free APPLICATIONS Low frequency power amplifier application. Power switching application. SOT-23 ORDERING INFORMATION Type No. KTC3265 Marking EO/EY Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC IB B Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current Collector Power Dissipation Junction and Storage Temperature Value 35 30 5 800 160 200 -55~150 Units V V V mA mA mW ℃ PC Tj,Tstg Document number: BL/SSSTC109 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Production specification KTC3265 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions IC=10mA,IE=0 IC=1mA,IB=0 B MIN 35 30 5 TYP MAX UNIT V V V IE=10mA,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=1V,IC=100mA IC=500mA, IB=20mA B 0.1 0.1 100 320 0.5 120 13 μA μA V MHz pF VCE=5V, IC= 10mA f=100MHz VCB=10V,IE=0,f=1MHz CLASSIFICATION Rank Range Marking OF hFE O 100-200 EO Y 160-320 EY Document number: BL/SSSTC109 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Production specification KTC3265 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC109 Rev.A www.galaxycn.com 3 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package A E Production specification KTC3265 SOT-23 SOT-23 Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J E G H H C J K 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device KTC3265 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC109 Rev.A www.galaxycn.com 4
KTC3265 价格&库存

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KTC3265
  •  国内价格
  • 1+0.20295
  • 100+0.18942
  • 300+0.17589
  • 500+0.16236
  • 2000+0.1556
  • 5000+0.15154

库存:18

KTC3265-EY
  •  国内价格
  • 50+0.04204
  • 500+0.03783
  • 5000+0.03503
  • 10000+0.03363
  • 30000+0.03223
  • 50000+0.03139

库存:0